2017 IEEE International Solid-State Circuits Conference (ISSCC) 2017
DOI: 10.1109/isscc.2017.7870384
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17.9 A 105Gb/s 300GHz CMOS transmitter

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Cited by 110 publications
(35 citation statements)
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“…Such results states that the industry has been capable of keeping up with the documents reported by the International Roadmap for Semiconductors [57]. CMOS transmitters have actually achieved up to 105 Gbps data rate using a 40-nm CMOS process at 300 GHz [58].…”
Section: A Solid-state Electronicsmentioning
confidence: 75%
“…Such results states that the industry has been capable of keeping up with the documents reported by the International Roadmap for Semiconductors [57]. CMOS transmitters have actually achieved up to 105 Gbps data rate using a 40-nm CMOS process at 300 GHz [58].…”
Section: A Solid-state Electronicsmentioning
confidence: 75%
“…A 300 GHz 32-QAM and 128-QAM transmitter with 105-Gbps data rate is demonstrated in a 40 nm CMOS process [37]. As there is no PA available, an array of eight square mixers (i.e., mixing through the second-order nonlinearity) is power combined at the output stage.…”
Section: Thz Transceiversmentioning
confidence: 99%
“…Even in CMOS processes, nonlinear passive devices with f T close to 1 THz can be realized [78,79]. Impressively, a 16 Gbps QPSK transceiver link at 240 GHz [63,64], a 105 Gbps QAM transmitter front-end [60], and a 30-Gbps QPSK transmitter [61] have all been demonstrated using passive mixers and multipliers using a 65 nm CMOS process. However, their system-level energy efficiency and practical long-range operation with full system integration including baseband circuits has not yet been investigated.…”
Section: Terahertz Devicesmentioning
confidence: 99%