1710-V 2.77-m/spl Omega/cm<sup>sub 2</sup> 4H-SiC trenched and implanted vertical junction field-effect transistors

Zhao, J.H.; Tone, K.; Alexandrov, Petre; Fursin, L.; Weiner, M.

doi:10.1109/led.2003.808841

Cited by 33 publications

(10 citation statements)

References 7 publications

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“…A variety of SiC VJFETs [1][2][3][4][5][6][7][8][9][10][11][12] have been reported by a number of teams. Many were normally-ON switches, 2,4-6,10 which in principal could conduct a higher current density and provide a lower specific resistance than normally-OFF devices, due to the wider channel opening in normally-ON devices.…”

Section: Sic Power Vjfetsmentioning

confidence: 99%

Silicon Carbide Power Field-Effect Transistors

Zhao¹

2005

MRS Bull.

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Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

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Section: Sic Power Vjfetsmentioning

confidence: 99%

Silicon Carbide Power Field-Effect Transistors

Zhao¹

2005

MRS Bull.

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“…The emergence of SiC power devices has brought the advantages of high-speed unipolar devices into much higher voltage classes than achievable with silicon devices. In general, SiC power devices (SiC Schottky diodes [1,2], SiC JFETs [3][4][5], SiC BJTs [6][7] and SiC MOSFETs [8][9]) demonstrate dramatically lower switching losses than similarly-rated silicon IGBTs. These SiC advantages initiate from the low reverse recovery losses and turn-off losses compared to silicon IGBTs.…”

Section: Introductionmentioning

confidence: 99%

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Matocha

Banerjee

Chatty

2016

MSF

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An advanced silicon carbide power MOSFET process was developed and implemented on a high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm silicon production line were demonstrated with blocking voltage of 1700V with VGS=0V. These SiC MOSFETs have a specific on-resistance as low as 3.1 mΩ-cm2 at room temperature, increasing to 6.7 mΩ-cm2 at 175°C. Devices were packaged in TO-247 package and measured to have on-resistance of 45 mΩ with VGS=20V at room temperature. Clamped inductive switching characterization of these SiC MOSFETs shows turn-off losses as low as 110 uJ (700V, 19.5A). The high-temperature gate bias stability was characterized at positive (+20) and negative gate bias (-10V) at 175°C. After 750 hours of gate stress at a gate bias of VGS=+20V and 175°C, we observe less than a 250mV shift in the threshold voltage. After 750 hours of stress at VGS=-10V and 175°C, we characterize a threshold voltage shift less than 100mV. This shows promise for high-volume production of reliable SiC MOSFETs on 150mm wafers.

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“…SiC has excellent properties such as wide band gap energy, high voltage capacity, heat resistance, electrical conductivity, and heat conductivity. Therefore, these devices are expected to exhibit lower power loss, higher current density, and using without a cooling system, and have gained much attention as a key technology for the low carbon society [1][2][3][4][5][6]. However, many challenges that must be resolved still remain; SiC wafer quality, SiC wafer cost, and development of high heatresistant packaging materials.…”

Section: Introductionmentioning

confidence: 99%

Thermomechanical reliability of Ag flake paste for die-attached power devices in thermal cycling

Sakamoto

Nagao

Suganuma

2013

2013 IEEE 63rd Electronic Components and Technology Conference

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The developments of SiC power devices have been dramatically advanced for the last several years, and are gaining much attention as a key technology for the low carbon society. These SiC power devices are expected to work under the high temperature condition of 250-300 °C because of the wide band-gap energy and the high heat resistance. To meet the high temperature operations, the diebonding materials must have sufficient reliability under the extreme thermal environments. The present study hence focuses on the thermal reliability of the die-attach technology with using Ag flake paste, which can be sintered at about 200 °C. For Si die-attachment on the Cu substrate, the Ag paste displays excellent reliability in the thermal cycles from −40 °C to 180 °C, and no serious degradation such as crack growth or interfacial debonding happens at either Si/Ag or Ag/Cu interfaces. The tested SiC die-attach samples maintained the high die-bonding strength up to 750 thermal cycles of −40 °C and 250 °C. However, thermal cracks and many voids appeared after 1000 cycles, and thus these damages due to thermal fatigue decreased the joining strength. These results indicate that the sintered Ag flake paste can withstand at the high operating temperature of new power devices, and our Ag paste can be employed as dieattach materials for both Si and SiC semiconductor power devices. IntroductionRecently, developments of SiC power semiconductor devices are dramatically advanced, and SiC power devices have gradually appeared on the market for a couple of years. SiC has excellent properties such as wide band gap energy, high voltage capacity, heat resistance, electrical conductivity, and heat conductivity. Therefore, these devices are expected to exhibit lower power loss, higher current density, and using without a cooling system, and have gained much attention as a key technology for the low carbon society [1-6]. However, many challenges that must be resolved still remain; SiC wafer quality, SiC wafer cost, and development of high heatresistant packaging materials. The packaging materials, particularly die-bonding materials, must have sufficient ability under the severe environments. Several types of high temperature solders; Au alloys [7-9], Bi alloys [10][11][12], and Zn alloys [13][14][15][16] have been proposed for new power devices, but almost all these alloys have low melting points, and hence cannot be applied in the operation temperature range above 250 °C. Moreover, these high temperature solders have additional disadvantages such as high cost, low electrical and

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1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors

Cited by 33 publications

References 7 publications

Silicon Carbide Power Field-Effect Transistors

Silicon Carbide Power Field-Effect Transistors

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Thermomechanical reliability of Ag flake paste for die-attached power devices in thermal cycling

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1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors

Cited by 33 publications

References 7 publications

Silicon Carbide Power Field-Effect Transistors

Silicon Carbide Power Field-Effect Transistors

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

Thermomechanical reliability of Ag flake paste for die-attached power devices in thermal cycling

Contact Info

Product

Resources

About

1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors