18.2 GHz Differential Low Noise Amplifier for On-chip Ultra Wide Band Transceiver

Haque, Md. Ariful; Hossain, Mir Saddam; Ahmed, Shamsuddin; Rashid, A. B. M. H.

doi:10.1109/tencon.2006.343757

Cited by 1 publication

(2 citation statements)

References 13 publications

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“…To summarize the results, the overall findings verify the proposed standard as a viable sub-micron mechanism to control the operating bandwidth of a low noise wideband amplifier. Table 1 documents the synopsis of the 90 nm amplifier performance to make a comparative assessment with regard to published results of millimeter wave deep sub-micron amplifiers [11][12][13][17][18][19][20][21][22] The proposed amplifier provides better port-isolation as calculated from the reflection parameters with low noise and reduced power penalty. To establish the relative merits of this microwave amplifier a figure of merit parameter (FOM) is defined by the equation…”

Section: Power Penaltymentioning

confidence: 99%

“…To introduce wideband characteristics to this component, designers are always looking for raising the operating bandwidth of a receiver front-end and reducing its overall power requirements [8]. In this regard, K and K band frequencies (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27) are deemed suitable for a microwave low noise amplifier for reliable high-speed short-distance transmission.…”

Section: Introductionmentioning

confidence: 99%

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A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

Roy

Rashid

2012

Open Engineering

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In this paper, a single-stage deep sub-micron wideband amplifier (LNA) using a reactive resonance tank and passive port-matching techniques is demonstrated operating in the microwave frequency range (K band). A novel power-efficient bandwidth (BW) regulation technique is proposed by incorporating a small impedance in the resonance tank of the amplifier configuration. It manifests a forward gain in the range of 5.9-10.7 dB covering a message bandwidth of 10.6-6.3 GHz. With regulation, input-output reflection parameters (S 11 , S 22 ) and noise figure can be manipulated by -12.7 dB, -22.7 dB and 0.36 dB, respectively. Symmetric regulation is achieved for bandwidth and small signal gain with respect to moderate tank impedance (36.5% and -26.8%, respectively) but the effect on noise contribution remains relatively low (increase of 7% from a base value of 2.39 dB). The regulated architecture, when analyzed with 90 nm silicon CMOS process, supports low power (9.1 mW) on-chip communication. The circuit is tested with a number of combinations for tank (drain) impedance to verify the efficiency of the proposed technique and achieves better figures of merit when compared with published literature.

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