19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

Abstract

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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

“…Si MOS quantum dot devices for spin qubits have been realized based on fully-depleted silicon on insulator (FD-SOI) technology [ 3 , 4 ] and sub-fin in conventional bulk fin field-effect transistor (FinFET) process [ 5 ]. The cryo-CMOS technology, based on conventional MOSFET [ 6 , 7 , 8 ], fully depleted silicon (germanium) on insulator (FD-SOI(GOI)) [ 9 , 10 , 11 , 12 ] and FinFET [ 13 ], has also been investigated. Some new kinds of devices [ 14 , 15 , 16 ] have now been reported for MOSFET alternatives.…”

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

“…Although operational cryo-CMOS circuits have been demonstrated down to 30 mK [17,30,[68][69][70], unfortunately no mature models are yet available to accurately predict the behavior of passive and active devices at cryogenic temperatures [71,72]. Due to this lack of compact models at cryogenic temperatures, designers are faced to a blind-design procedure, which reduces the optimization of cryogenic integrated circuits [12,30,32,58,[73][74][75]. Using the extensive electrical characterizations of single FDSOI transistors at cryogenic temperatures, it is however possible to already design efficient circuits.…”

“…Among them oscillators are essential building blocks in many digital and analog circuits. They are required for example to generate a clock signal in the control circuit of quantum computers [30,76], and so must be also efficient at cryogenic temperature. Here we have electrically characterized ring oscillator (RO) fabricated from 28 nm-FDSOI technology [30,77].…”

“…They are required for example to generate a clock signal in the control circuit of quantum computers [30,76], and so must be also efficient at cryogenic temperature. Here we have electrically characterized ring oscillator (RO) fabricated from 28 nm-FDSOI technology [30,77]. Figure 31a shows the delay per stage of a 101-stages RO as a function of temperature from 300 K down to 4.2 K. Without any back-biases applied on the MOSFETs composing the inverter stages, decreasing the temperature results in slowing down the RO.…”

“…Some works have studied bulk MOSFETs operation at cryogenic temperature emphasizing in particular kink behavior and freeze-out effects in those devices [7,15,[20][21][22][23][24]. Recently, outstanding characteristics have been demonstrated at 4.2 K on advanced CMOS technologies [19,[25][26][27], in particular for Fully Depleted Silicon-On-Insulator (FDSOI) [28][29][30][31][32]. Ultrathin film FDSOI devices (with typically silicon thickness less than 10 nm) are immune to kink effects [33], and freeze-out has finally little impact on the DC characteristics of MOSFETs in advanced technologies [34].…”