2017 IEEE International Solid-State Circuits Conference (ISSCC) 2017
DOI: 10.1109/isscc.2017.7870393
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19.3 A 50-to-66GHz 65nm CMOS all-digital fractional-N PLL with 220fs<inf>rms</inf> jitter

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Cited by 8 publications
(5 citation statements)
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“…In [6], a 60 GHz chipset with 22.5-26.23 GHz integrated PLL, which achieved a phase noise of −92 dBc/Hz at 1 MHz offset, was realized with 0.13 μm BiCMOS process. In [7,8], all-digital mmWave PLL (ADPLL) was realized, but its in-band phase noise performance was limited to around −85 dBc/Hz. To improve the phase noise performance and attenuate the parasitic effect on the circuit operating frequency, frequency multiplication techniques, such as the injection locked oscillator [9,10], harmonic extraction [11],…”
Section: Introductionmentioning
confidence: 99%
“…In [6], a 60 GHz chipset with 22.5-26.23 GHz integrated PLL, which achieved a phase noise of −92 dBc/Hz at 1 MHz offset, was realized with 0.13 μm BiCMOS process. In [7,8], all-digital mmWave PLL (ADPLL) was realized, but its in-band phase noise performance was limited to around −85 dBc/Hz. To improve the phase noise performance and attenuate the parasitic effect on the circuit operating frequency, frequency multiplication techniques, such as the injection locked oscillator [9,10], harmonic extraction [11],…”
Section: Introductionmentioning
confidence: 99%
“…To improve the performance of a PLL, many aspects can be considered including the utilisation of digital controlled oscillator instead of VCO [9,[12][13][14], counter and comparator based logic [15] or implementing reference injected structure [16], etc. Among the basic building blocks of a PLL, the PFD is one of the important parts and its interaction with CP affects widely the general performance of the PLL.…”
Section: Introductionmentioning
confidence: 99%
“…Equation (41), (30), (32), (36), (39), and (40) predicts that over the subset of [6 GHz,7 GHz] the frequency of the DCO will be: 29. Using excel, the trend line and coefficient of correlation is also given on the plot.…”
Section: Example Of Using R 2 Field Mapsmentioning
confidence: 99%
“…If two current mirrors are used to sink or source the oscillator (one at each source node of each negative gm transistor), then banks (like those in Figure 32) can also be implemented on the source side of the negative gm transistors. The resulting effect would be that the capacitance of the banks on the source side would translate to the drain side of the transistors (and hence adding capacitance to the overall tank capacitance) by a factor given by [36] - [39]:…”
Section: Banks On Source Side Of Negative Gm Transistorsmentioning
confidence: 99%
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