1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Koswatta, Siyuranga O.; Koester, Steven J.; Haensch, Wilfried

doi:10.1109/iedm.2009.5424279

Cited by 26 publications

(21 citation statements)

References 12 publications

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“…10,27 An additional negative gate bias is required to turn off the OFF-state tunneling mechanism. 29 Besides, I ON of the TFET from structure C is smaller than that from structure B under the same applied drain voltage. It is due to the fact that higher degree of recombination occurs owing to trap centers caused by much greater defect density in structure C. In addition, more than 4 orders in magnitude deterioration of I ON /I OFF ratio was found in the TFET devices fabricated from structure C than structure B.…”

Section: Device Performancesmentioning

confidence: 89%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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Articles you may be interested inTunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction J. Appl. Phys. 113, 094502 (2013) The compositional dependence of effective tunneling barrier height (E beff ) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in In x Ga 1Àx As and 60% to 65% in GaAs 1Ày Sb y layers, the E beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E beff of 0.21 eV show 2Â improvement in ON-state current compared to the device with E beff of 0.30 eV. On contrary, the value of E beff was decreased from 0.21 eV to À0.03 eV due to the presence of high defect density at the GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. V C 2012 American Institute of Physics. [http://dx

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Section: Device Performancesmentioning

confidence: 89%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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“…In that case, an additional gate bias is required to turn off this tunneling mechanism. 19 As a result, the E beff value should be well optimized to guarantee high performance operation for both ON and OFF states in a p-channel or n-channel TFET structure. It has been reported that high I ON of 135 lA/lm with high I ON /I OFF ratio of 2.7 Â 10 4 (V DS ¼ 0.5 V, and V ON À V OFF ¼ 1.5 V) was achieved using the similar device structure for n-channel TFET, 6 indicating promising device performance is expected in the structure studied here for complementary p-channel TFET application.…”

mentioning

confidence: 99%

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Zhu

Jain

Mohata

et al. 2012

Applied Physics Letters

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“…Moreover, scattering-assisted tunneling (not considered in the simulation) is reduced due to the relatively high phonon energy required to enable electron tunneling from the source valence band to the channel conduction band. Since phonon population decreases with the increased energy, off-current is effectively suppressed [7]. Compared to Fig.…”

Section: Based On the Requirementmentioning

confidence: 84%

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

Guan

Huang

Kang

et al. 2010

2010 14th International Workshop on Computational Electronics

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GNR (Graphene NanoRibbon) Tunneling-FETs (GNRTFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended Hückel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high I on /I off ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.

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1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Cited by 26 publications

References 12 publications

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation

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