1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Okuno, Junko; Kunihiro, Takafumi; Konishi, Kenta; Materano, Monica; Ali, Tarek; Kuehnel, Kati; Seidel, Konrad; Mikolajick, Thomas; Schroeder, Uwe; Tsukamoto, Masanori; Umebayashi, Taku

doi:10.1109/jeds.2021.3129279

Cited by 39 publications

(24 citation statements)

References 22 publications

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“…If insufficient thermal budget is applied to the capacitors, the film would contain more anti-ferroelectric or amorphas domains, resulting in lower remanent polarization. The RTA did not degrade the characteristics of the CMOS transistors post backend-of-line (BEOL) process [13]. Fig.…”

Section: A Device Fabricationmentioning

confidence: 97%

“…In terms of 1T1C FeRAMs, many researchers have reported that MFM capacitor exhibits high cycling tolerance for hard breakdown owing to the good interfacial property between the ferroelectric layer and metal electrodes [11]- [13]. In addition, anti-ferroelectric type (AFE-type) 1T1C FeRAMs comprising tetragonal phase dominant HfO2-based ferroelectric material have been proposed.…”

Section: Introductionmentioning

confidence: 99%

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Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Okuno¹,

Kunihiro²,

Konishi³

et al. 2022

IEEE J. Electron Devices Soc.

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Section: A Device Fabricationmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Okuno¹,

Kunihiro²,

Konishi³

et al. 2022

IEEE J. Electron Devices Soc.

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“…Uwe Schroeder,* Terence Mittmann,* Monica Materano, Patrick D. Lomenzo, Patrick Edgington, Young H. Lee, Meshari Alotaibi, Anthony R. West, Thomas Mikolajick, Alfred Kersch, and Jacob L. Jones DOI: 10.1002/aelm.202200265 ductor devices like ferroelectric capacitors, transistors, and tunnel junctions in recent years. Capacitor-based ferroelectric random access memory [2,3] and ferroelectric field effect transistors [4] using HfO 2based ferroelectrics have already been integrated into state of the art CMOS processes to prove the potential of this new ferroelectric material system. However, a detailed understanding of the ferroelectric phase formation process, including phase transitions, is necessary for continued development because such phase transitions determine ferroelectric device temperature stability.…”

Section: Temperature-dependent Phase Transitions In Hf X Zr 1-x O 2 M...mentioning

confidence: 99%

Temperature‐Dependent Phase Transitions in Hf_xZr_1‐xO₂ Mixed Oxides: Indications of a Proper Ferroelectric Material

Schroeder

Mittmann

Materano

et al. 2022

Adv Elect Materials

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Knowledge about phase transitions in doped HfO2 and ZrO2‐based films is crucial for developing future ferroelectric devices. These devices should perform in ambient temperature ranges with no degradation of device performance. Here, the phase transition from the polar orthorhombic to the nonpolar tetragonal phase in thin films is of significant interest. Detailed electrical and structural characterization is performed on 10 nm mixed HfxZr1‐xO2 binary oxides with different ZrO2 in HfO2 and small changes in oxygen content. Both dopant and oxygen content directly impact the phase transition temperature between the polar and nonpolar phase. A first‐order phase transition with thermal hysteresis is observed from the nonpolar to the polar phase with a maximum in the dielectric constant. The observed phase transition temperatures confirm trends as obtained by DFT calculations. Based on the outcome of the measurements, the classification of the ferroelectric material is discussed.

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“…In particular, among FE-HfO 2 , ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) , can be processed at a low temperature of around 400 °C, − which satisfies the thermal budget requirement for back-end-of-line (BEOL) processing. Therefore, FeRAM using ferroelectric HZO is expected to be a potential candidate for the implementation of BEOL-embedded nonvolatile memory; there have already been several reports demonstrating BEOL memory arrays of FeRAM using ferroelectric HZO. , …”

Section: Introductionmentioning

confidence: 99%

“…Therefore, FeRAM using ferroelectric HZO is expected to be a potential candidate for the implementation of BEOL-embedded nonvolatile memory; there have already been several reports demonstrating BEOL memory arrays of FeRAM using ferroelectric HZO. 8,9 Despite the properties mentioned above, FE-HfO 2 materials have two crucial challenges that must be overcome to satisfy the requirements for embedded FeRAM. One challenge is to reduce their high operating voltage.…”

Section: Introductionmentioning

confidence: 99%

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Toprasertpong

Tahara

Hikosaka

et al. 2022

ACS Appl. Mater. Interfaces

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The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field product and poor endurance due to the high operating field close to the breakdown field. In this study, we demonstrate that the thickness scaling of ferroelectric HZO down to 4 nm is a promising approach to overcome these challenges. As the coercive voltage scales down almost linearly with the film thickness, the operating voltage of 4 nm HZO is reduced to 0.6 V for one-shot operation and 1.2 V for stable memory operation, which is in the voltage range compatible with scaled silicon technologies. Furthermore, it is found that the breakdown field is substantially improved in thinner HZO since the breakdown mechanism is dominated by the stress voltage, not the stress field, resulting in improved cycle-to-breakdown by more than 4 orders of magnitude when thinning from 9.5 to 4 nm. We identify two concerns accompanying thickness scaling: the increase in crystallization temperature and the pinched hysteresis behavior, which can be addressed by carefully preparing temperature-thickness mapping and applying strong-field wake-up cycling, respectively. Our optimal 4 nm-thick HZO ferroelectric capacitor exhibits an operating voltage of 1.2 V with over 10 year data retention and 1012 endurance cycles at 100 kHz, which can be further improved to more than 1014 with a smaller capacitor size and higher operating frequency.

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1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Cited by 39 publications

References 22 publications

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Temperature‐Dependent Phase Transitions in Hf_xZr_1‐xO₂ Mixed Oxides: Indications of a Proper Ferroelectric Material

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

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1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Cited by 39 publications

References 22 publications

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

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Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Temperature‐Dependent Phase Transitions in Hf_xZr_1‐xO₂ Mixed Oxides: Indications of a Proper Ferroelectric Material

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory