2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure

Liao, Fengbo; Keming, Zhang; Zeng, Ni; Lian, Mengxiao; Li, Jialin; Zhang, Xichen; Tian, Z X; Yian, Yin

doi:10.1007/s11664-022-09605-8

Cited by 3 publications

(2 citation statements)

References 32 publications

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“…The breakdown voltage of GaN heterojunction devices is severely limited by the defect leakage at the interface between substrate and GaN buffer layer [1][2][3][4][5][6]. The defects also result in a large gap between the breakdown voltage of GaN devices and the theoretical value.…”

Section: The Advantages and Shortcomings Of Gan-based Schottky Diodementioning

confidence: 99%

“…Actual parameter value and theoretical limits of the devices based on different materialsThe electric field crowding effect of horizontal devices will impact the breakdown voltage. The electric field crowding effect refers to the uneven distribution of electric field in the loss layer when the Schottky diode bias is at a high back bias voltage[1][2][3][4][5]. A peak electric field at the electrode edge is determined by the proximity of the electrode edge and the intensity of the electric field line distribution.…”

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confidence: 99%

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The Retrospect and Prospect of GaN-Based Schottky Diode

2022

J. Phys.: Conf. Ser.

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In the 21st century, with the continuous progress of human society and the continuous upgrading of the integrated circuit industry in recent years, the rapid development of modern science and technology makes us have higher and higher requirements for semiconductor products in our life and production. Compared with the first generation and the second generation of semiconductors, the third generation of semiconductors represented by GaN relies on its high electron mobility, bandgap width, electron saturation speed, high-temperature resistance, radiation resistance, and other suitable material properties. It has more and more extensive application prospects in the research field of microwave high-power devices. Today, the introduction of semiconductors in electronics improves the energy efficiency of equipments and modules. Gallium nitride (GaN) - based schottky diodes have broad application prospects in the next generation of schottky diodes due to their excellent performance. However, because of some technical concerns, these materials have not been fully developed. This work briefly summarized some science and technology related to GaN-Based Schottky Diode. A special focus will be put on the advantages and disadvantages of GaN-Based Schottky Diode, discussing some modern improved designs. Finally, possible breakthroughs of GaN-Based Schottky Diode will be summarized.

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Section: The Advantages and Shortcomings Of Gan-based Schottky Diodementioning

confidence: 99%

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confidence: 99%

The Retrospect and Prospect of GaN-Based Schottky Diode

2022

J. Phys.: Conf. Ser.

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Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates

Bai

Chai

Zhao

et al. 2023

J. Electron. Mater.

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On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

He,

Huang,

Wang

et al. 2024

Jpn. J. Appl. Phys.

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This work employs advanced physical models with the help of TCAD tools to systematically design and investigate AlGaN/GaN Schottky barrier diodes (SBDs), focusing on enhancing forward conduction and reverse blocking characteristics. A recessed metal/insulator/III-nitride (MIS) anode is demonstrated to manage electric field distribution. The incorporation of a 1 nm thick Al₂O₃ layer enables a reduced leakage current and a significant increase in breakdown voltage (BV). Subsequently, tailored field plates (FP) further improve BV of MIS SBD to ~1650V but uncover electric field concentration at FP edge. Hence, MIS SBD with a graded AlGaN barrier layer (MIS-GA SBD) is designed, featuring a gradient decrease in Al content along the [0001] direction. The generation of negative polarization charges within the barrier functions as a super-junction, significantly homogenizing the electric field. As a result, the MIS-GA SBD achieves a remarkable BV exceeding 3500 V, highlighting its strong potential for high-voltage power electronic applications.

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2.2 kV Breakdown Voltage AlGaN/GaN Schottky Barrier Diode with Polarization Doping Modulated 3D Hole Gas Cap Layer and Polarization Junction Structure

Cited by 3 publications

References 32 publications

The Retrospect and Prospect of GaN-Based Schottky Diode

The Retrospect and Prospect of GaN-Based Schottky Diode

Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

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