2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

Garbuzov, D.Z.; Lee, H.; Khalfin, V.; Martinelli, Ramon U.; Connolly, J.C.; Belenky, Gregory

doi:10.1109/68.769710

Cited by 125 publications

(62 citation statements)

References 12 publications

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“…[1][2][3][4][5][6][7][8] Besides the binaries GaSb, InAs, and AlSb, this family includes a number of ternary (Ga 1Ϫx In x Sb, AlAs x Sb 1Ϫx , etc.͒ and quaternary (Ga 1Ϫx In x As y Sb 1Ϫy , Al x Ga 1Ϫx As y Sb 1Ϫy , etc.͒ random alloys, 9 as well as superlattices ͑e.g., InAs/ AlSb, InAs/Ga 1Ϫx In x Sb) and digital alloys ͑e.g., Ga 1Ϫx In x As/Ga 1Ϫx In x Sb, AlAs/AlSb͒ that provide numerous additional opportunities for engineering of the band structures and electronic wave functions.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

Borca‐Tasciuc

Song

Meyer

et al. 2002

Journal of Applied Physics

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A differential 3 technique is employed to determine the thermal conductivity of the AlAs 0.07 Sb 0.93 ternary alloy, the Al 0.9 Ga 0.1 As 0.07 Sb 0.93 quaternary alloy, and an (AlAs) 1 /(AlSb) 11 digital-alloy superlattice. Between 80 and 300 K, the thermal conductivities for all three samples are relatively insensitive to temperature. The thermal conductivity of the (AlAs) 1 /(AlSb) 11 superlattice is smaller than that of the AlAs 0.07 Sb 0.93 ternary alloy, but much larger than the predictions of a model for phonon transport across the superlattice interfaces.

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Section: Introductionmentioning

confidence: 99%

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

Borca‐Tasciuc

Song

Meyer

et al. 2002

Journal of Applied Physics

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“…To date, GaInAsSb Quantum Well (QW) lasers grown on GaSb substrates have exhibited the most promising properties in the 2-3 µm spectral range [1]. Low threshold, high power lasers operating continuous wave (CW) at room temperature (RT) have been realised in recent years, as interest in this material system has grown [2]. CW threshold current densities of 34 A cm -2 per QW for a device with λ ~ 2.38 µm and 58 A cm -2 per QW for a device emitting at 2.24 µm have been recorded at room temperature [3,4] and output powers of over 500 mW have been achieved with the application of anti-reflection coatings [5,6].…”

Section: Introductionmentioning

confidence: 99%

Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

O’Brien¹,

Sweeney

Adams

et al. 2006

Physica Status Solidi (b)

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Hydrostatic pressure and spontaneous emission techniques have been used to examine the important recombination mechanisms in type-I GaInAsSb/GaSb quantum well lasers. High pressure results indicate that Auger recombination dominates the threshold current of 2.11 mu m and 2.37 mu m devices and is the origin of their temperature sensitivity around room temperature. While the characteristics of the 2.37 mu m devices are much improved by the suppression of the CHSH Auger process, since its spin-orbit splitting energy is greater than its band gap, other important Auger processes such as CHHL and CHCC persist. In the larger band gap 2.11 mu m devices, an increase in threshold current with pressure is observed suggesting that CHSH Auger is present in these devices at atmospheric pressure and contributes to performance degradation at these shorter wavelengths

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“…Significant progress has been achieved in technology of type-I GaSb-based quantum well (QW) diode lasers. Watt class continuous wave (CW) output power levels were obtained from single laser emitters in spectral region from 2.3 to 2.8 m at room temperature [1]- [7]. Recently, devices operating near 3 m at room temperature with more than 100 mW of CW output power were reported [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

Chen

Donetsky

Shterengas

et al. 2008

IEEE J. Quantum Electron.

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Abstract-InGaAsSb/AlGaAsSb quantum well (QW) diode laser structures with either 1% or 1.5% compressively strained QWs were grown on GaSb substrates by molecular beam epitaxy. Widestripe lasers fabricated from structures of both types have roomtemperature operating wavelengths near 2.3 microns. The roomtemperature threshold current density of 1-mm-long uncoated devices with 1.5% strained QWs was lower than threshold current density of the 1.0% strained QW devices by nearly a factor of two (120 A/cm 2 versus 230 A/cm 2 ). Experiment shows that the reduction in threshold current density with increasing QW strain is related to the increase in differential gain and decrease in transparency current density. Optical gain calculations prove that improvement of the QW hole confinement reduces the threshold carrier concentration in laser structures with heavily strained low arsenic content quantum wells.Index Terms-Mid-infrared, GaSb-based, type-I, high power, heavy compressive strain, differential gain, hole confinement.

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2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

Cited by 125 publications

References 12 publications

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

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