2.3: High Mobility Top‐Gate Self‐Aligned and BCE a‐IGTO TFTs Application to Micro‐LED and Mini‐LED Display

Abstract

The top‐gate self‐aligned structure and back channel etched (BCE) structure have been conducted employing InGaSnO (IGTO) as an active layer in this study. The mobility of IGTO TFT is around 35 cm2/Vs for both TFT structures by optimizing the fabrication process. The 7.1 inch 270 x 320 (x RGB) micro‐LED display driven by top‐gate self‐aligned IGTO TFTs and 35 inch pitch 1.6mm mini‐LED display tiled by 4(L)*2(W) sheets of 10.7 inch 120 x 120 (x RGB) panel driven by BCE IGTO TFTs are demonstrated. The power consumption of panel driven by IGTO TFTs is the 43% of IGZO, resulting in the outstanding merits of high mobilitydevices.

38.1: Invited Paper: Research progress of high‐performance Metal Oxide for Micro‐LED

“…IGTO and IGZTO has been well applied achieving mobility as 25~35 cm 2 V -1 s -1 at V th 0~1V. 5,6 Typical G4.5 IGZTO/IGTO IV curves and V th distribution has been depicted in Figure 2, which shows good uniformity.…”

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

“…Recently, an ever-increasing demand on the carrier mobility and reliability has pushed the research efforts toward the alternative semiconducting multi-component materials and device structure. Specifically, high mobility oxide (HMO) semiconductor can be divided into amorphous (i.e., IGTO, IGZTO, X-IZO) and IGO crystalline oxide material, which was attributed to the synergic intercalation of In3+ and Sn4+ 5s orbital cations, leading to the lower effective electron mass and enhanced mobility in the resulting field-effect transistors [4][5][6] . However, HMO TFTs are especially sensitive to negative-bias-illumination-stress (NBIS).…”

P‐1.2: Improvement of Mobility and Reliability of a‐IGZO TFTs by Dual‐Gate Driving

“…Amorphous oxide semiconductors (AOSs) thin-film transistors (TFTs), which is represented by an amorphous indium gallium zinc oxide [1-3] (a-IGZO), have become a promising drive backplane technology for the mini-LED and micro-LED equipped with much higher current and brightness without sacrificing lifetime, due to their high mobility, extremely low leakage current, good uniformity and electrical stability. An ever-increasing demand [4] on the carrier mobility and reliability has pushed the research efforts toward the alternative semiconducting multicomponent materials [5][6] (i.e. IGTO and IGZTO) and device structure.…”