2.33-$\mu$m-Wavelength Distributed Feedback Lasers With InAs–In$_{0.53}$Ga$_{0.47}$As Multiple-Quantum Wells on InP Substrates

Sato, Tomonari; Mitsuhara, Manabu; Nunoya, Nobuhiro; Fujisawa, Takeshi; Kasaya, K.; Kano, F.; Kondo, Y.

doi:10.1109/lpt.2008.924204

Cited by 57 publications

(23 citation statements)

References 12 publications

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“…3.22. The active layer consists of four 5-nm-thick strained InAs wells and 20-nm-thick InGaAs barriers with a lattice matched to the InP substrate [35], which was sandwiched between SCH layers. The lattice mismatch strain of an InAs layer on an InP substrate is as high as 3.2%.…”

Section: Degradation Of Highly Strained Inas/inp Mqwmentioning

confidence: 99%

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Takeshita

2012

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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By employing the optical-beam-induced current (OBIC) measurement technique, we have analyzed the sudden and wear-out failure of optical devices. The extent of the degraded region is estimated by using relative OBIC intensity prior to aging. The use of OBIC incident sources at several wavelengths enables us to detect degradation in facets, epitaxial layers, and the device interior. IntroductionOptical-beam-induced current (OBIC) measurement [1][2][3][4], as well as other approaches such as electron-beam-induced current (EBIC) measurement [5] and luminescence measurement [6], can determine the existence of deterioration in optical and electronic devices. Of these approaches, the OBIC technique has the advantages of being nondestructive and capable of selecting wavelengths [7].First, since the OBIC is measured through the window of a transistor outline (TO) can before and after aging, we are able to detect an OBIC change for several periods of aging. When there are nonradiative recombination centers in the degraded region, the OBIC intensity decreases as the recombination density increases [8]. The relative OBIC intensity prior to aging is useful for analyzing the degree of device degradation. Furthermore, the incident light that illuminates the facet is absorbed in the semiconductor. However, the lights incident on the top surface rather than the facet are absorbed in the layer to a depth of not more than a few micrometer. The OBIC measurement technique that involves illuminating the facet is therefore expected to be highly susceptible to degradation.

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Section: Degradation Of Highly Strained Inas/inp Mqwmentioning

confidence: 99%

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Takeshita

2012

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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“…Due to the fact that they can be grown self-assembled on InP(001) and related lattice-matched material, Qdashes can directly benefit from the growth and processing technologies that have been mastered through the development of telecommunications lasers, while, as compared to the latter approach of type-II QWs, they can maintain appreciably lower threshold current densities. On the other hand, it is also possible to achieve a long wavelength emission with very satisfying performances by using highly strained type-I QWs on InP, 17 but investigating lowdimensional nanostructures deserves attention as it may ultimately provide opportunities for wide-range tunability.…”

Section: Introductionmentioning

confidence: 99%

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Papatryfonos

Saladukha

Merghem

et al. 2017

Journal of Applied Physics

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Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers

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“…However, it would be significantly advantageous to grow high-performance diode lasers for this spectral band on conventional InP substrates, since the processing technologies are more mature and one can avoid the use of Al-containing GaSb-based alloys. Emission wavelengths as long as 2.33 mm have been demonstrated from highly strained type-I InAs quantum wells (QWs) on InP by employing lowtemperature growth [1]. To extend the type-I QW emission beyond 2.3 mm, a metamorphic buffer layer (MBL) can be employed to produce a ''virtual substrate'' with a larger lattice constant.…”

Section: Introductionmentioning

confidence: 99%

InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Kirch

Garrod

Kim

et al. 2010

Journal of Crystal Growth

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2.33-$\mu$m-Wavelength Distributed Feedback Lasers With InAs–In$_{0.53}$Ga$_{0.47}$As Multiple-Quantum Wells on InP Substrates

Cited by 57 publications

References 12 publications

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers

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