2.44 kV Ga&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; vertical trench Schottky barrier diodes with very low reverse leakage current

Li, Wenshen; Hu, Zongyang; Nomoto, Kazuki; Jinno, Riena; Zhang, Zexuan; Tu, Thieu Quang; Kuramata, Akito; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/iedm.2018.8614693

Cited by 65 publications

(74 citation statements)

References 9 publications

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“…(Fig. 3(a)) Using current of 1 A/cm 2 as breakdown condition, Schottky barrier diode had a breakdown voltage of 45 V, which corresponds to a breakdown field of 3 MV/cm, which is comparable with previous reports [14,15]. The BaTiO3/Ga2O3 heterojunction diode showed significantly higher breakdown voltage of 85 V, corresponding to a peak electric field of 5.7 MV/cm (calculated assuming background doping = 10 16 cm -3 ).…”

Section: Breakdown Characteristicssupporting

confidence: 86%

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Xia

Chandrasekar

Moore

et al. 2019

Applied Physics Letters

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Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging.We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type β-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultrawide band gap semiconductors where bipolar doping is challenging.

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Section: Breakdown Characteristicssupporting

confidence: 86%

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Xia

Chandrasekar

Moore

et al. 2019

Applied Physics Letters

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“…This also shows the relation between breakdown voltage, electric field and doping in vertical geometry rectifier consisting of a lightly doped drift region on a more heavily doped layer on a conducting substrate of these respective materials. Experimental points for Ga 2 O 3 from different groups 19,21,22,[25][26][27][28]34,35,[46][47][48]57 are also shown-these are not yet at the values achieved by the smaller bandgap SiC and GaN, where the theoretical limits are now being approached. Continued development of low defect substrates, optimized epi growth and surface treatments and improved device design and processing methods for Ga 2 O 3 are still required to push the experimental results closer to their theoretical values.…”

Section: Resultsmentioning

confidence: 95%

“…The key aspect in designing the field plate edge termination is to shift the region of the high field region away from the periphery of the rectifying contact. Ar implantation, 58 beveling 42 or use of trenches 48 have also been shown to reduce field crowding in Ga 2 O 3 rectifiers. However, these add complexity to the fabrication relative to simple field plates and in the case of trenches, reduce the current capability.…”

Section: Methodsmentioning

confidence: 99%

“…Vertical geometry, large area planar devices can produce large total forward currents, while maintaining adequate reverse breakdown. [45][46][47][48][49][50][51][52][53][54][55][56][57][58] This is a stringent test of material quality, since large diodes increase the probability of incorporating defects into the active region, degrading reverse breakdown voltage. 37,39,43,45 Lateral devices can achieve high breakdown voltage using large contact separations, but cannot simultaneously achieve high forward current due to the low total conduction thickness.…”

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confidence: 99%

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Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

Yang

Fares

Elhassani

et al. 2019

ECS J. Solid State Sci. Technol.

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There is interest in developing large area Ga 2 O 3 rectifiers for applications in hybrid power converters. Vertical geometry, Schottky rectifiers with area 1.2 × 1.2 mm 2 fabricated on thick (8μm), undoped (n = 4.4 × 10 15 cm −3) β-Ga 2 O 3 epitaxial layers oN conducting bulk substrates exhibit both high forward current (1A in pulsed mode) and reverse breakdown voltage (V B = 760V). This breakdown voltage was ∼200V higher than rectifiers without the presence of a bilayer SiO 2 / SiN x field plate. This edge termination is critical for obtaining high breakdown voltage by reducing electric field crowding around the metal contact periphery. Optimization of the field plate design is still needed, since devices are observed experimentally to breakdown at the contact periphery. When purposely driven to failure at high reverse bias, pits are observed in the high field regions at the edge of the contact. The specific on-resistance (R on) for these large area rectifiers was 22 m .cm −2 , with a figure-of-merit V B 2 /Ron of 26 MW.cm −2. The potential of Ga 2 O 3 for power electronics is clear when it is realized that these values are still an order of magnitude lower than theoretical values. The diode on-off ratio was in the range 2.7 × 10 7-2.2 × 10 9 when switching from +1.5V forward bias to 1-100V reverse bias.

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“…As another technique to enhance

V_{br}

{Ga}_{2} {normalO}_{3}

trench SBDs, as shown in Figure , were reported from Cornell University. [ 49,50 ] An anode electrode was formed to cover trench sidewalls on which an Al 2 O 3 dielectric was deposited. At the reverse‐biased off‐state condition, the depletion region laterally spread from the sidewalls, leading to an increase in

V_{br}

.…”

Section: β-Ga 2 Normalo 3 Diodesmentioning

confidence: 99%

β‐Gallium Oxide Devices: Progress and Outlook

Higashiwaki

2021

Physica Rapid Research Ltrs

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Beta‐gallium oxide (β-Ga2normalO3) has a history of research and development for over 70 years; however, it has attracted little attention as a semiconductor material for a long time. The situation has drastically changed in the past decade, and research on its material properties and developments of growth and device technologies has become active worldwide, mainly from expectations for applications to next‐generation power devices. Most of the specific material properties are attributed to its extremely large bandgap energy of 4.5 eV. The other important material feature is that large‐size single‐crystal bulks can be synthesized by melt growth methods. Herein, after introducing the material properties of β-Ga2normalO3 that are important for electronic devices, the current status of bulk melt growth and epitaxial thin‐film growth technologies is given. State‐of‐the‐art β-Ga2normalO3 diodes and transistors are also discussed, including future prospects.

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2.44 kV Ga<inf>2</inf>O<inf>3</inf> vertical trench Schottky barrier diodes with very low reverse leakage current

Cited by 65 publications

References 9 publications

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers

β‐Gallium Oxide Devices: Progress and Outlook

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2.44 kV Ga<inf>2</inf>O<inf>3</inf> vertical trench Schottky barrier diodes with very low reverse leakage current

Cited by 65 publications

References 9 publications

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers

β‐Gallium Oxide Devices: Progress and Outlook

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Product

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Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers