2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced Epitaxy

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

“…In migration enhanced epitaxy both Ga and N fluxes are modulated consecutively. In some cases the Ga shutter open time would coincide with the nitrogen shutter closed period without any interval of overlap [13]. MEE growth improvements are less pronounced at higher growth temperatures where the Ga atoms have higher surface mobility.…”

Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxy

“…This implies that gas supply scheme can be an important way to control Ga diffusion efficiency. In fact, flow modulation epitaxy (FME) is one of the well known epitaxial methods in which gas supply is intentionally controlled and there have been many works on FME [2,3].…”

Role of excited nitrogen species in the growth of GaN by RF–MBE

“…They concluded that h-GaN grown by using an RF discharge is superior to that grown by using an m-ECR in the viewpoint of the growth rate, optical property. Nowadays, a growth rate of h-GaN exceeding 2.0 mm/h has been reported for hexagonal GaN growth with an RF source [12]. However, the effects of nitrogen discharge by RF plasma on the growth mechanism of group III-nitride in RF-MBE is not fully understood yet.…”