2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Abstract

Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure diode lasers with an active region made of InAs alloys. The devices were grown by liquid-phase epitaxy. Typical values of threshold current at 80 K were as low as 40 mA and the maximum operating temperature was 180 K. The blue shift of lasing modes was observed with current. This was explained by the increase of the carrier density in the active region above threshold due to intervalence band absorption.

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

“…Nonetheless, there are actually only a few reports of detailed optical characteristics from this alloy. In addition, in these previous studies, the epitaxy growth of InAsPSb was performed outside the extent of the miscibility gap by liquid-phase epitaxy (LPE) [2,6,7] or organometallic vaporphase deposition (OMVPE) [3][4][5]. The studies reported here focused on the growth of InAsPSb thick epitaxial layers matched to InAs by gas source molecular beam epitaxy (GSMBE).…”

The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100 cm−1)

“…Lasers for 3-4 m can be made from InAs related compounds. 13 The development of technologies for the production of lasers operating at 3.3-3.6 m region provide very attractive tunable radiation sources with relatively high spectral purity. 14,15 The quality of the laser is determined by its spectral characteristics.…”

Infrared diode laser spectroscopy

“…The random deviations of the fre− quency μ are responsible for the effective width of the lasing line. In view of the Lorentzian shape of the line [16], Df can be found as the doubled standard deviation of the lasing frequency…”

“…Lasers for 3-4 μm can be made from InAs related com− pounds [16]. The development of technologies for the pro− duction of lasers operating at 2.3-3.6−μm region provides very attractive tunable radiation sources with relatively high spectral purity [17,18].…”