2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

Goel, Ekta; Kumar, Sanjay; Singh, Kunal; Singh, Balraj; Kumar, Mukesh; Jit, Satyabrata

doi:10.1109/ted.2016.2520096

Cited by 104 publications

(29 citation statements)

References 27 publications

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“…The threshold voltage V th Cl without considering quantum effects can be modelled from the surface potential profile for that value of VGS at which the minimum surface potential equals twice fermipotential [19,20]…”

Section: Analytical Modellingmentioning

confidence: 99%

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Shora

Khanday

2019

IET Circuits, Devices & Systems

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Here, the authors propose an analytical model to evaluate the performance of an advanced trigate MOSFET structure called trapezoidal trigate MOSFET on silicon-on-nothing (TTMSON). The model is based on the solution of Poisson's partial differential equation in three dimensions. The expression for potential distribution has been used to model other device parameters like electric field distribution, quantum inversion charge, and threshold voltage. The TTMSON device immunity to various short channel effects (SCEs), such as drain-induced barrier lowering (DIBL) and sub-threshold swing, has been examined. A detailed analysis of the gate and channel engineering techniques like dual material gate, graded channel, and dual material gate with graded channel has also been carried out to choose the best device structural configuration for enhancing the device performance and mitigating SCEs in nano-regime. In addition, the effect of inclination angle on different performance parameters has been considered. The proposed analytical model of TTMSON has been verified by comparing the model results with the simulation results using the numerical device simulator ATLAS.

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Section: Analytical Modellingmentioning

confidence: 99%

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Shora

Khanday

2019

IET Circuits, Devices & Systems

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“…where m = 1, 2 and 3 for Region 1, Region 2 and Region 3, respectively. Using (3), (12) and (13), C 2j (x) is calculated as (see (14)) where j = 1, 2 and 3 for Region 1, Region 2 and Region 3, respectively.…”

Section: Analytical Modellingmentioning

confidence: 99%

“…Here, σ m = ζ m /θ, λ = θThe constants P 1 -P 3 , Q 1 -Q 3 can be evaluated using (9) and (10) and the following boundary conditions. Continuity of the surface potentials and electric flux at the interface of two different gate materials [14,15] is represented by…”

Section: Analytical Modellingmentioning

confidence: 99%

Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor

Banerjee¹,

Saha²,

Sarkar³

2018

IET Circuits, Devices & Systems

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This study presents a three-dimensional (3D) analytical model of triple material tri-gate silicon-on-nothing metaloxide-semiconductor field-effect transistor. The performance of the device by varying the different device parameters as well as the device's immunity toward the various short channel effects such as Drain-induced barrier lowering (DIBL), hot carrier effect, threshold-voltage roll-off and subthreshold swing are investigated. The 3D Poisson's equation with appropriate boundary conditions is solved considering the parabolic potential approximation method to obtain the surface potential distribution. In addition, the calculations for threshold voltage and electric field are also done and the results obtained are verified using a 3D device simulator, namely ATLAS from SILVACO.

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“…14 To further reduce both HCEs and SCEs, graded-channel (GC) structure (doping profile in the Silicon channel decreases from the source/channel interface to the drain/channel interface) is employed in the DG MOSFET. 15,16 Till now, so many researchers have developed the different analytical models to attain the subthreshold performance of the SOI and DG MOSFETs. [17][18][19] Aritra et al developed the two-dimensional (2-D) analytical model for the subthreshold performance of asymmetric 4 T and 3 T DG MOSFETs 20 that describes the change in position of the charge centroid with a difference in the front/back gate bias.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance

Suddapalli

Nistala

2020

Int J Numerical Modelling

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In this paper, a two-dimensional (2-D) center channel potential based subthreshold current (SC) and subthreshold swing (SS) are developed analytically for strained-Si (s-Si) graded-channel dual-material double gate (GC-DMDG) MOSFET with interface charges. The proposed analytical model is extracted by solving 2-D Poisson equation in s-Si graded-channel using appropriate boundary conditions. The analytical 2-D model includes effects of various MOSFET parameters such as s-Si channel length, strain in the silicon substrate, and oxide interface charge density with damaged length by extensively analyzing channel potential, SC, and SS. Also, the subthreshold characteristics of the proposed s-Si GC-DMDG MOSFET demonstrate superior performance over s-Si graded channel double gate MOSFET. The numerical results obtained using TCAD of the proposed DG MOSFET are validated with the results attained from proposed analytical model. Moreover, the performance of CMOS inverter using s-Si GC-DMDG MOSFET is evaluated for different device parameters. It is investigated that the proposed s-Si GC-DMDG MOSFET has better noise margin than s-Si GC-DG MOSFET.

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2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

Cited by 104 publications

References 27 publications

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor

Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance

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