2-D localization in single wall carbon nanotube network synthesized by arc-plasma method

Kim, G.T.; Park, J.G.; Park, Y.W.; Liu, K.; Düsberg, G.; Roth, S.

doi:10.1016/s0379-6779(98)00223-9

Cited by 2 publications

(1 citation statement)

References 24 publications

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“…Transport phenomena in bulk SWNT were studied by many authors. [2][3][4][5][6][7] Results were usually interpreted in terms of Mott-like 3D and 2D VRH or 2D weak localization (WL). Our work suggests that macroscopic samples of SWNT are essentially 3D despite the 1D character of SWNTs and 2D character of the rope lattice.…”

Section: Introductionmentioning

confidence: 99%

Metal-insulator transition in doped single-wall carbon nanotubes

2005

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We find strong evidence for a metal-insulator (MI) transition in macroscopic single wall carbon nanotube conductors. This is revealed by systematic measurements of resistivity and transverse magnetoresistance (MR) in the ranges 1.9-300 K and 0-9 Tesla, as a function of p-type redox doping. Strongly H 2 SO 4 -doped samples exhibit small negative MR, and the resistivity is low and only weakly temperature dependent. Stepwise de-doping by annealing in vacuum induces a MI transition. Critical behavior is observed near the transition, with ρ(T) obeying power-law temperature dependence, ρ(T) ∝ T -β . In the insulating regime (high annealing temperatures) the ρ(T) behavior ranges from Mott-like 3-dimensional (3D) variable-range hopping

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Section: Introductionmentioning

confidence: 99%

Metal-insulator transition in doped single-wall carbon nanotubes

2005

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Electronic and magneto-transport in chirality sorted carbon nanotube films

Janas

Czechowski

Adamus

et al. 2018

Applied Physics Letters

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This research details electronic and magneto-transport in unsorted and chirality-enriched carbon nanotube (CNT) films. By measuring the electrical conductivity from 4 K to 297 K, we were able to assign the governing mechanism of electronic transport. Fluctuation-induced tunnelling was in accordance with the obtained data and very well matched the underlying physics. We demonstrated how a change in the type of CNT to make the film affects its electrical performance. As the temperature was decreased down to cryogenic conditions, up to a 56-fold increase in resistance was noted. Moreover, the measurement of magnetoresistance (MR) revealed a non-monotonic dependence on the applied magnetic field. The initial negative component of MR was eventually overpowered by the positive MR component as the field strength was increased beyond a certain threshold.

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2-D localization in single wall carbon nanotube network synthesized by arc-plasma method

Cited by 2 publications

References 24 publications

Metal-insulator transition in doped single-wall carbon nanotubes

Metal-insulator transition in doped single-wall carbon nanotubes

Electronic and magneto-transport in chirality sorted carbon nanotube films

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