2‐D Materials and Devices

Tsuchiya, Hiroyuki; Kamakura, Yoshinari

doi:10.1002/9781118871737.ch7

Carrier Transport in Nanoscale MOS Transistors 2016

DOI: 10.1002/9781118871737.ch7

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2‐D Materials and Devices

Hiroyuki Tsuchiya¹,

Yoshinari Kamakura²

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2021

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Indium Gallium Zinc Oxide FinFET Compared with Silicon FinFET

Matebesi

Ditshego

2021

JNanoR

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Indium gallium zinc oxide fin-field effect transistor (IGZO FinFET) characteristics are investigated and then compared with Zinc oxide fin-field effect transistor (ZnO FinFET) and the Silicon fin-field effect transistor (Si FinFET). This was done using 3D simulation. The threshold voltage for Si, ZnO, and IGZO is 0.75 V, 0.30 V and 0.05 V respectively. The silicon device has the highest transconductance (5.0 x 10-7 S) and performs better than the other devices because it has less fixed charge defects. IGZO has the second-best value of Gm (3.6 x 10-7 S), ZnO has the least value of Gm (3.4 x 10-7 S). Si device has the least drain current (IDS) value of 2.0 x 10-7 A, ZnO device has a better IDS value of 6.2 x 10-6 A while IGZO device has the best IDS value of 1.6 x 10-5 A. IGZO is better than Si by two (2) order magnitude. The field effect mobility is 50.0 cm2/Vs for all three devices.

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Indium Gallium Zinc Oxide FinFET Compared with Silicon FinFET

Matebesi

Ditshego

2021

JNanoR

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2‐D Materials and Devices

Cited by 1 publication

References 95 publications

Indium Gallium Zinc Oxide FinFET Compared with Silicon FinFET

Indium Gallium Zinc Oxide FinFET Compared with Silicon FinFET

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