2-D simulation of electron movement on dielectric window surface under high power microwave

Xiwei, 郝西伟 Hao; Guanjun, 张冠军 Zhang; Wenhua, 黄文华 Huang; Shi, 秋实 Qiu; Changhua, 陈昌华 Chen; Jinyong, 方进勇 Fang

doi:10.3788/hplpb20102201.0099

Cited by 5 publications

(8 citation statements)

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“…10, showing an increase data reported in Ref. [6] Experimental data/kW for a longer microwave generally, and the results are consistent with those in Ref. [29].…”

Section: Dependence Of Damage Threshold On Pulse Width and Frequencysupporting

confidence: 90%

“…In Ref. [6] some typical CMOS integrated components were tested under diverse frequencies, and in Ref. [27] the pulse width effect of PN junction damage was investigated.…”

Section: Dependence Of Damage Threshold On Pulse Width and Frequencymentioning

confidence: 99%

“…[1] Since the external microwave may induce a catastrophic impact, the microwave effects on various integrated circuits and semiconductors have widely been investigated in these last few years. Many experimental researches were carried out through testing the damage susceptibility of discrete PIN diode, [2] high electron mobility transistor (HEMT), [3,4] bipolar transistor, [5] integrated components on transistor-transistor logic (TTL) and CMOS logic, [6] computer system, [7] etc. Besides, theoretical studies were also presented widely.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

et al. 2017

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The thermal failure induced by high power microwave (HPM) in a complementary metal oxide semiconductor (CMOS) inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data.

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“…10, showing an increase data reported in Ref. [6] Experimental data/kW for a longer microwave generally, and the results are consistent with those in Ref. [29].…”

Section: Dependence Of Damage Threshold On Pulse Width and Frequencysupporting

confidence: 90%

“…In Ref. [6] some typical CMOS integrated components were tested under diverse frequencies, and in Ref. [27] the pulse width effect of PN junction damage was investigated.…”

Section: Dependence Of Damage Threshold On Pulse Width and Frequencymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

et al. 2017

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“…A simple way is to azimuthally divide the 1-D SWS into several partitions, such as that in Refs. [13]- [17]. The cavity used in this paper is illustrated in Fig.…”

Section: Basic Discussion Of a Single Cavitymentioning

confidence: 99%

Magnetically insulated transmission line oscillator oscillated in a modified HEM₁₁mode

et al. 2009

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This paper puts forward a novel magnetically insulated transmission line oscillator (MILO) for the first time which takes a modified HEM11 mode as its main interaction mode. The excitation of the oscillation mode is made possible by carefully adjusting the arrangements of each resonant cavity in a two-dimensional (2-D) slow wave structure. The high frequency characteristics are analyzed and a PIC simulation is carried out; the detailed results are discussed to get a better understanding of this new MILO. Employing an electron beam of about 441 kV and 39.7 kA, it finds that the modified HEM11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz. The power conversion efficiency is about 8.4% and the generated microwave is in a TE11-like circularly polarized mode; its polarization direction is decided by the rotation direction of the SWS.

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“…The other is the so-called S-P-FEI radiation originated from ordinary S-P radiation but enhanced by the micro-bunching of electron beam in some special direction corresponding to the second harmonic of the evanescent wave. [16] The evolution curve of field power the poynting vector over an area S.DA and the corresponding FFT at output port are shown in Fig. 12.…”

Section: Pic Simulation Of Beam-wave Interactionmentioning

confidence: 99%

Smith-Purcell free electron laser based on the semi-elliptical resonator

孟现柱¹,

王明红²,

任忠民³

2011

Chinese Phys. B

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A novel Smith-Purcell (S-P) free electron laser composed of an electron gun, a semi-elliptical resonator, a metallic reflecting grating and a collector, is presented for the first time. This paper studies the characteristics of this device by theoretical analysis and particle-in-cell simulation method. Results indicate that tunable coherent S-P radiation with a high output peak power at millimeter wavelengths can be generated by adjusting the length of the grating period, or adjusting the voltage of the electron beam. The present scheme has the following advantages: the semi-elliptical resonator can reflect all radiation with the emission angle θ and random azimuthal angles, back onto the electron beam with same-phase and causes the electrons to be modulated, so the output power and efficiency are improved.

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2-D simulation of electron movement on dielectric window surface under high power microwave

Cited by 5 publications

References 0 publications

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Magnetically insulated transmission line oscillator oscillated in a modified HEM₁₁mode

Smith-Purcell free electron laser based on the semi-elliptical resonator

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2-D simulation of electron movement on dielectric window surface under high power microwave

Cited by 5 publications

References 0 publications

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Magnetically insulated transmission line oscillator oscillated in a modified HEM11mode

Smith-Purcell free electron laser based on the semi-elliptical resonator

Contact Info

Product

Resources

About

Magnetically insulated transmission line oscillator oscillated in a modified HEM₁₁mode