Diffusion in Semiconductors
DOI: 10.1007/10426818_4
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2 Diffusion in Si

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Cited by 5 publications
(7 citation statements)
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“…So lithium atoms are kept in the surface-adsorbed positions by the high potential barriers. It is worth noting that the barriers of migration under the surface are lower and are comparable with the migration barriers in bulk silicon, obtained from theoretical calculations (0.85 eV for a cubic silicon supercell containing 64 atoms) and experiment (0.8 eV [13]). …”
Section: Dft Calculations Of Lithium Atoms Behavior On Silicon Surfacsupporting
confidence: 80%
See 1 more Smart Citation
“…So lithium atoms are kept in the surface-adsorbed positions by the high potential barriers. It is worth noting that the barriers of migration under the surface are lower and are comparable with the migration barriers in bulk silicon, obtained from theoretical calculations (0.85 eV for a cubic silicon supercell containing 64 atoms) and experiment (0.8 eV [13]). …”
Section: Dft Calculations Of Lithium Atoms Behavior On Silicon Surfacsupporting
confidence: 80%
“…In this process, the change in volume causes large mechanical stresses and, consequently, a break-up of the crystal [8][9][10][11]. In addition to this, silicon has a low diffusion coefficient for lithium ions [12,13]. These limitations impede application of bulk silicon in modern Li-ion batteries.…”
Section: Introductionmentioning
confidence: 99%
“…However, the actual time response of the actuator system has to be tested experimentally, as this also depends on the current density the material can withstand. A significant doping of the waveguide with Li can be neglected since the diffusion and solubility of Li in crystalline Si is very low at room temperature. , …”
Section: Implementation Of Actuator On Soi Platform: Simulationsmentioning
confidence: 99%
“…[13], Chen et al [7], Beregovsky et al [25], Dellas et al [23], Appenzeller et al [22]. Data from studies on bulk Si are adapted from [24] and [26].…”
Section: Ni Silicide Formation In Si Nanochannelsmentioning
confidence: 99%