2 MeV aluminum implantation into silicon: radiation damage

Mechanisms of damage formation in semiconductors

“…(9) and, as can be seen from the figure, a good fit is obtained for all ion species applied. Similar results can be also found for other semiconductors like Ge [30,43], Si [30,31,40], SiC (see e.g. [44]), GaAs [43] and InAs [45].…”

“…14 depicts the damage concentration versus the ion fluence N I for three examples for which T I % T c is fulfilled [47]. Similar curves are also measured for silicon ion implanted at the corresponding temperatures (see [40] and references therein). Fig.…”

“…Eq. (6) is also successfully applied to Si (see [40] and references therein) and III-V compounds implanted at elevated temperatures (see Section 6), and to AlAs (see Section 7.1).…”