2.P.254 Changes of lipid levels in Korean population

Ryoo, Un Ho; Kim, T.H.; Kim, C.J.; Ryu, Wang-Kyun

doi:10.1016/s0021-9150(97)88890-9

Cited by 1 publication

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“…Such a postulation is valid considering that Pt is permeable to oxygen which allows reversible migration and storage of oxygen species in the grain boundaries of Pt in contact with metal oxides. [52][53][54] S. Won et al demonstrated a higher concentration of V O s at the amorphous WO 3-x /Pt interface in the case of the Au/WO 3-x /Pt MIM device. [35] A schematic of the envisaged switching process in the device under consideration is presented in Figure 6.…”

Section: Switching Mechanismmentioning

confidence: 99%

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO_3–xBased MIM Device

Rudrapal

Bhattacharya

Venimadhav

et al. 2022

Adv Elect Materials

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Resistive switching (RS) in metal oxides, which offers self‐compliance and multiple resistance states without the requirement of any high voltage forming step, holds the potential of application in selector less high density resistive random access memory (RRAM) devices. Typically, operation of metal oxide‐based RS devices requires the integration of additional oxide layers or circuit elements to achieve current compliance and complicated device architecture for high‐density memory applications. In this study, a self‐compliance, and multi‐level RS is demonstrated that does not require high voltage forming in a single layer non‐stoichiometric WO3–x. This study suggests that high oxygen vacancy (VO) concentration in the pristine WO3–x layer leads to its forming‐free filamentary switching characteristics, whereas reversible formation and annihilation of an oxygen‐rich region in the filament at the WO3–x/Pt junction has been envisaged to be responsible for self‐compliance set and voltage controlled multiple reset resistance states. The results demonstrate non‐stoichiometric WO3–x with an active metal/oxide interface permeable to reversible oxygen migration can pave the way for producing high density, reliable RRAM devices.

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Section: Switching Mechanismmentioning

confidence: 99%

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO_3–xBased MIM Device

Rudrapal

Bhattacharya

Venimadhav

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

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2.P.254 Changes of lipid levels in Korean population

Cited by 1 publication

References 0 publications

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO_3–xBased MIM Device

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO_3–xBased MIM Device

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2.P.254 Changes of lipid levels in Korean population

Cited by 1 publication

References 0 publications

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO3–xBased MIM Device

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO3–xBased MIM Device

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Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO_3–xBased MIM Device

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO_3–xBased MIM Device