20·5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts

Brendle, W.; Nguyen, V.X.; Grohe, A.; Schneiderlöchner, E.; Rau, Uwe; Palfinger, Günther; Werner, J.H.

doi:10.1002/pip.696

Cited by 40 publications

(17 citation statements)

References 9 publications

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“…Good S rear values of only 300-500 cm/s were obtained for the UV laser source, while these values were approximately doubled when the contacts were made with the VIS laser. The S rear value can be interpreted as the effective surface recombination that results from the initially well passivated rear surface and the much higher recombination velocity at the laser-fired contacts [11]. Note that the fraction of contacted area was rather low and very similar for both laser sources (f≈1%).…”

Section: Rear Surface Recombination Velocitymentioning

confidence: 99%

“…Furthermore, the implementation of point contact structures is now more viable owing to the fast development of the laser-firing technique [10]. Conversion efficiencies above 20% have been already reported in conventional (diffused-emitter) solar cells incorporating rear laser-fired contacts (LFC) through different passivation layers [11]- [13]. Alternative metallic sources to produce laser-fired contacts have also been tested in completed devices [14], [15].…”

Section: Introductionmentioning

confidence: 99%

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Study of the Surface Recombination Velocity for Ultraviolet and Visible Laser-Fired Contacts Applied to Silicon Heterojunction Solar Cells

Morales-Vilches

Voz

Colina

et al. 2015

IEEE J. Photovoltaics

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Abstract-In this work we investigate the effect of the laser-firing process on the back surface passivation of p-type silicon heterojunction solar cells. For that purpose, two different nanosecond laser sources radiating at ultraviolet (355 nm) and visible (532 nm) wavelengths are employed. Firstly, we optimize the laser-firing process in terms of the electrical resistance of locally diffused point contacts. Specific contact resistance values as low as 0.91 mΩ⋅cm 2 and 0.57 mΩ⋅cm 2 are achieved for the visible and ultraviolet laser sources, respectively. In addition, the impact of the laser-firing process on the rear surface passivation is studied by analyzing the internal-quantum-efficiency curves of complete devices. Low surface recombination velocities in the range of 300 cm/s are obtained for the ultraviolet laser with a 1% fraction of contacted area. This value increases to about 700 cm/s for the visible laser, which indicates a significantly higher recombination at the contacted area. The best heterojunction solar cells with rear laser-fired contacts are obtained for the ultraviolet laser and reached a 17.5% conversion efficiency.

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Section: Rear Surface Recombination Velocitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the Surface Recombination Velocity for Ultraviolet and Visible Laser-Fired Contacts Applied to Silicon Heterojunction Solar Cells

Morales-Vilches

Voz

Colina

et al. 2015

IEEE J. Photovoltaics

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“…In order to measure using SEM and SIMS, we cut the wafer as size of 8 x 8 mm 2 . The grooving laser had maximum output power of 10W and 532 nm output from Nd:YAG laser was used.…”

Section: Methodsmentioning

confidence: 99%

Localized Diffusion of Dopant by Laser Assist

Bae

Lee

2011

International Summer Session: Lasers and Their Applications

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Enhancement of solar cell efficiency was tried by doping selectively using laser. Grooved depth of the silicon wafer was measured as a function of incident green laser intensity. Phosphorus was sprayed on grooved area. Sprayed silicon wafer was annealed while varying incident diode laser intensity. The effect of doping was analyzed by using 4-PointProbe and Secondary Ion Mass Spectrometer. Doped depth and dopant concentration were analyzed as a function of laser power and phosphorous concentration. The measurement of efficiency was tried.

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“…To date, different kinds of lasers [10] and alternative metallic sources [11] [12] have been successfully tested to produce laser-fired contacts (LFC) in complete solar cells. Conversion efficiencies over 20% [13] [14] were reported for a conventional diffused emitter, whereas in low-temperature heterojunction devices we have recently obtained efficiencies around 18% [15].…”

Section: Introductionmentioning

confidence: 99%

Low Surface Recombination in Silicon-Heterojunction Solar Cells With Rear Laser-Fired Contacts From Aluminum Foils

Colina

Morales-Vilches

Voz

et al. 2015

IEEE J. Photovoltaics

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Abstract-In this work an approach to create laser-fired contacts from aluminum foils is studied on p-type silicon heterojunction solar cells. This alternative approach consists in the use of aluminum foils instead of evaporated layers as a metal source and rear electrode for the laser-firing process. A q-switched infrared laser (1064 nm) was employed to create the local point contacts. Quasi-Steady-State Photoconductance measurements evidenced a limited degradation in the surface passivation quality during the laser-firing process. Heterojunction solar cells fabricated with these rear contacts reached a best conversion efficiency of 18% with a remarkable opencircuit voltage of 690 mV. These values were very close to those of reference devices fabricated with evaporated aluminum layers. This result suggests a similar effect on the rear surface passivation by both contact strategies. However, external quantum efficiency curves revealed a better response of devices with a rear aluminum foil in the near infrared. Optical measurements indicate that this effect can be related to a higher internal reflection at the back surface. Consequently, laser-fired contacts from aluminum foils appear as a fast and convenient solution for the rear contact of high-efficiency silicon solar cells.

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20·5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts

Cited by 40 publications

References 9 publications

Study of the Surface Recombination Velocity for Ultraviolet and Visible Laser-Fired Contacts Applied to Silicon Heterojunction Solar Cells

Study of the Surface Recombination Velocity for Ultraviolet and Visible Laser-Fired Contacts Applied to Silicon Heterojunction Solar Cells

Localized Diffusion of Dopant by Laser Assist

Low Surface Recombination in Silicon-Heterojunction Solar Cells With Rear Laser-Fired Contacts From Aluminum Foils

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