20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

Hopfer, F.; Mutig, A.; Fiol, G.; Kuntz, M.; Shchukin, V. A.; Haisler, V. A.; Warming, T.; Stock, E.; Mikhrin, S. S.; Krestnikov, I. L.; Livshits, D.A.; Kovsh, A. R.; Bornholdt, C.; Lenz, Andreas; Eisele, H.; Dähne, M.; Ledentsov, N. N.; Bimberg, D.

doi:10.1109/jstqe.2007.905133

Cited by 62 publications

(42 citation statements)

References 25 publications

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“…First and foremost, a proof-ofprinciple that QDs are viable gain elements for SDLs was needed. Investigations started with a target emission of ∼ 1 μm, a wavelength where proven high-performance operation of edge emitters and VCSELs had already been achieved [81][82][83]. The constraints imposed here are marginally different from the ones associated with the design of QW-based SDLs.…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

“…18), were deemed the most promising since they offer a large ground-state gain and they can be grown with good size uniformity at high densities (∼ 10 11 /cm 2 ) with a minimum stacking distance of 20 nm [82,83]. Their true 3-dimensional confinement should also provide easy population inversion and good thermal immunity.…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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“…All processing for this device was performed by my former colleague Alex Mutig as described in [Hop07]. Selective oxidation of the Al-rich aperture layer was done using optimized conditions as described in ref.…”

Section: Processing and Characterizationmentioning

confidence: 99%

“…Processing and characterization of edge emitters was carried out by Kristijan Posilovic and Thorsten Kettler. Electro-optically modulated vertical emitters were processed by Alex Mutig using standard lithography techniques as detailed in [Hop07]. Device performance measurements were performed by Alexey Nadtochiy and Sergey Blokhin.…”

Section: A5 Processing and Device Characterizationmentioning

confidence: 99%

“…Additionally, QDs from a single material system such as InGaAs/GaAs are tunable over a wide spectral range while sustaining good optical quality and gain for laser applications. In order to combine high peak gain and the intrinsic advantages of the three-dimensional QD confinement within one structure, so called sub-monolayer (SML) structures were proposed, and were recently used for first laser applications [Hop07,Ger08b].…”

Section: Introductionmentioning

confidence: 99%

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Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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2012

Diode Lasers and Photonic Integrated Circuits

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20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

Cited by 62 publications

References 25 publications

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Design and Realization of Novel GaAs Based Laser Concepts

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