20-Mode Universal Quantum Photonic Processor

Taballione, Caterina; Anguita, Malaquias Correa; Goede, Michiel de; Venderbosch, Pim; Kassenberg, Ben; Snijders, Henk; Kannan, Narasimhan; Vleeshouwers, Ward; Smith, Devin H.; Epping, Jörn P.; Meer, Reinier van der; Pinkse, Pepijn W. H.; Vlekkert, Hans van den; Renema, Jelmer J.

doi:10.22331/q-2023-08-01-1071

Cited by 30 publications

(5 citation statements)

References 66 publications

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“…Among various material platforms, silicon nitride (SiN) is emerging rapidly thanks to its excellent properties for passive elements including low loss and a large transparency window extending from UV to mid-infrared [8,9]. Universal quantum photonics processors based on linear optics have been demonstrated with SiN, showing arbitrary linear transformation, Hong-Ou-Mandel interference, and higher-dimensional single-photon gates [10][11][12]. However, it lacks active components necessary to make a fully functional quantum platform.…”

Section: Introductionmentioning

confidence: 99%

Design of GaAs microcavity on SiN waveguide for efficient single-photon generation by resonant excitation

Pholsen,

Ota,

Iwamoto

2024

Mater. Quantum. Technol.

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Silicon nitride (SiN) photonic circuits are attracting significant interest as a platform for photonic quantum information processing. Integration of deterministic single photon sources (SPSs) is required for large-scale single-photon-based quantum applications. InAs/GaAs quantum dots (QDs) have been demonstrated to be state-of-the-art deterministic SPSs under resonant excitation. However, InAs/GaAs QD SPSs integrated on chip often suffer from unwanted crosstalk from scattering of resonant excitation laser. Moreover, the mismatch in refractive indices of SiN and GaAs impedes efficient coupling of single photons into the photonic circuit. In this work, we design a GaAs photonic crystal (PhC) nanobeam cavity with an embedded QD on top of a SiN waveguide in SiO2 that can suppress crosstalk from resonant excitation and realize high coupling efficiency at the same time. The crosstalk is reduced by employing a carefully designed nanobeam cavity that removes complex structures around the excitation spot. The high coupling efficiency is achieved with a weak hybridized mirror formed by proximity of GaAs PhC nanobeam and SiN waveguide that makes the cavity and helps transferring photons into the waveguide. This enables more than 90% coupling efficiency. The designed device is expected to be a bright source of indistinguishable photons.

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Section: Introductionmentioning

confidence: 99%

Design of GaAs microcavity on SiN waveguide for efficient single-photon generation by resonant excitation

Pholsen,

Ota,

Iwamoto

2024

Mater. Quantum. Technol.

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“…In addition to a remarkable single photon emitter source, silicon nitride is a wide-bandgap semiconductor material (has an indirect band gap, , and band gap tuning depends on deposition conditions − ) that also exhibits exceptional properties– transparency window from visible to near-infrared wavelength regime, , thermo-optic response, , nonlinearity, negligible two-photon absorption at C-band, low propagation and insertion loss, CMOS-compatibility, and fabrication flexibility. , This makes SiN a technology-driven material that has a refractive index ( n ∼ 2) and offers relatively good index contrast (Δ n ) with underlying SiO 2 clad layer for efficient mode confinement with ultralow propagation loss in compact and complex integration of components in a photonic chip. Leading photonics foundries, LigenTec, Imec, LioniX, − and quantum technology companies, for example, Xanadu and QuiX, have adapted the SiN optical material platform for next-generation photonic or QPIC development.…”

Section: Sin Materials Growthmentioning

confidence: 99%

“…29,30 This makes SiN a technology-driven material that has a refractive index (n ∼ 2) and offers relatively good index contrast (Δn) with underlying SiO 2 clad layer for efficient mode confinement with ultralow propagation loss in compact and complex integration of components in a photonic chip. Leading photonics foundries, LigenTec, Imec, LioniX, 31−33 and quantum technology companies, for example, Xanadu 34 and QuiX, 35 have adapted the SiN optical material platform for next-generation photonic or QPIC development.…”

mentioning

confidence: 99%

Emission Engineering in Monolithically Integrated Silicon Nitride Microring Resonators

Mandal,

Singh,

Kumar

et al. 2024

ACS Materials Lett.

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Monolithic integration of solid-state emitters with photonic elements of the same material is a promising approach to overcome the constraints of fabrication complexity and coupling losses in traditional hybrid integration approaches. A wide band gap, low-loss silicon nitride (SiN) platform is a mature technology, having CMOS compatibility, widely used in hybrid integrated photonics and optoelectronics. However, it has been shown that certain growth conditions enable the SiN material to host color centers, whose origin is currently under investigation. In this work, we have engineered a novel technique for the efficient coupling of these intrinsic emitters into the whispering gallery modes (WGMs) of the SiN microring cavity, which has not been explored previously. We have engineered a subwavelength-sized notch into the rim of the SiN microring structure to optimize the collection efficiency of the cavity-coupled enhanced photoluminescence (PL) spectra at room temperature. The platform presented in this work will enable the development of the monolithic integration of color centers with nanophotonic elements for application to quantum photonic technologies.

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“…Universal quantum photonic processing can be realized using networks of tunable beam splitters (TBS) [5]. Such quantum photonic processing units have been successfully demonstrated with tunable Mach-Zehnder interferometers (MZIs) as their central building block on silicon [6], silica-on-silicon [7], and silicon nitride [8] integrated photonics platforms. Additionally, for realization of standalone quantum photonics circuits, the integration of efficient quantum light sources is equally important.…”

Section: Introductionmentioning

confidence: 99%

On-chip tunable quantum interference in a lithium niobate-on-insulator photonic integrated circuit

Maeder,

Finco,

Kaufmann

et al. 2024

Quantum Sci. Technol.

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Programmable interferometric circuits are at the heart of integrated quantum photonic processors. While the lithium niobate-on-insulator platform has the potential to advance integrated quantum photonics due to its strong nonlinearity and tight mode confinement, the demonstration of reconfigurable two-photon interference has not yet been achieved. Here, we design, fabricate and characterize the building block of such interferometric networks in the form of a 2x2 Mach-Zehnder Interferometer. We use a thermo-optic phase shifter to achieve stable performance with a power consumption of Pπ = 44.4 mW and sub-microsecond switching times. We demonstrate the effectiveness of our device for quantum applications by measuring single-photon routing with up to 34 dB extinction ratio. We show Hong-Ou-Mandel interference with fully tunable visibilities reaching a maximum value of 97.4 ± 1.0 %. As part of large scale quantum photonic circuits, this building block will facilitate reconfigurable and tunable photonic processing units integrated alongside non-classical light sources.

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20-Mode Universal Quantum Photonic Processor

Cited by 30 publications

References 66 publications

Design of GaAs microcavity on SiN waveguide for efficient single-photon generation by resonant excitation

Design of GaAs microcavity on SiN waveguide for efficient single-photon generation by resonant excitation

Emission Engineering in Monolithically Integrated Silicon Nitride Microring Resonators

On-chip tunable quantum interference in a lithium niobate-on-insulator photonic integrated circuit

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