1992
DOI: 10.1049/el:19921383
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20 nm wavelengty tunable singlemode picosecond pulse generation at 1.3 μm by self-seeded gain-switched semiconductor laser

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Cited by 54 publications
(19 citation statements)
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“…We varied the external cavity length between 235mm and 250mm, corresponding to a maximum of 50ps time offset between the feedback signal and the main laser signal. This variation did not induce any noticeable changes in the temporal and spectral characteristics of the laser output, and the system showed stability similar to that reported for the near-IR systems [3][4][5] .…”
Section: Methodssupporting
confidence: 55%
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“…We varied the external cavity length between 235mm and 250mm, corresponding to a maximum of 50ps time offset between the feedback signal and the main laser signal. This variation did not induce any noticeable changes in the temporal and spectral characteristics of the laser output, and the system showed stability similar to that reported for the near-IR systems [3][4][5] .…”
Section: Methodssupporting
confidence: 55%
“…Here, we present an alternative method, based on gain-switched operation of a commercial, unmodified InGaN laser, self-seeded in a non-resonant external cavity, thus implementing a technique previously demonstrated in the near infrared (IR) spectral region [3][4][5] .…”
Section: Introductionmentioning
confidence: 99%
“…Gain switching of the LD provides an easy and convenient way for optical short-pulse generation by directly driving the LD with ultrashort pulses [1] or sinusoidal electrical currents [2,3]. Moreover, to generate tunable singlewavelength optical short pulses by gain-switching, an injection locking scheme is usually employed, which can be achieved externally by the injection of a cw light beam [4], the optical pulses generated in another LD [5,6], or internally by the feedback optical pulses, i.e., self-seeding [7][8][9]. Self-seeding is a relatively simple method, as only one commercially available LD is used.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4] However, the intensity of light injected into the laser diode is usually small, which leads to a relatively low side-mode suppression ratio (SMSR) of the output pulses. 5,6 Another problem of weak intensity light injection is the limited injectionlocking range; i.e., injection locking can happen only within a small range centered on each laser's longitudinal mode, 7,8 with the results that wavelength tuning of a FP laser diode can be implemented only in a discrete manner and that the smallest wavelength-tuning step depends on the mode spacing of the laser diode used. As the laser emission mode wavelengths may not coincide with the International Telecommunication Union grid wavelengths, the applications of FP laser diodes in optical fiber communications may be limited.…”
Section: Introductionmentioning
confidence: 99%