20 W CW monolithic AlGaAs (810 nm) laser diode arrays

The luminescent properties of Er3+–Yb3+-doped fluorophosphate fiber glass preforms at high temperatures

“…In particular, the development of an effective Er 3+ -Yb 3+ fluorophosphate fiber laser with a scalable output requires the detailed information about the temperature-dependent spectral properties of the active medium. Since the pump power from the available laser diode bars [14] may reach several tens of Watts, a drop of the emission cross-section and quantum efficiency (known as the temperature quenching effect) of the laser active material inevitably occurs.…”

<title>Optimization issues of AlGaAs/GaAs QW-SCH lasers intended for 808-nm range</title>

“…It is seen in Fig.3 that changing the LD drive conditions from q-CW to CW regime causes the spectrum shift of the order of 3 -5 nm. Assuming the thermal shift of a laser action wavelength of 3 nm per 10°C [1], the evaluated temperature increase due to change from q-CW to CW drive conditions is 10 -16°C. This is therefore the temperature range for laser dibdes or bars to be cooled down in order to keep constant 2 808 nm during this change.…”

Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

“…High-power semiconductor laser diodes and arrays are efficient devices to pump solid state lasers [1,2]. In spite of high electrical-to-optical conversion efficiency (about 50--60%) and effective thermal mounting of the devices to a heat sink, a large amount of loss power leads to a considerable increase of temperature in the active zone of the laser diode under high-power operation.…”