200 kVA compact IGBT modules with double-sided cooling for HEV and EV

Abstract

Abstract-High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR 2 DIE TM has a small area of 28.5 mm x 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.

Package and Module Design

“…Such thin wafers are prone to warpage when the solder bump is applied to the emitter and collector sides [10]. These modules require a voltage blocking capability of 650 V and a current handling capability of 300 A.…”

IGBT Applications

“…Although this reduced the breakdown voltage of the device from 650 to 400 V, optimization of the injection efficiency of the collectorebase junction has allowed reduction of the turn-off dI/dt from 5.9 to 5.3 kA/ms. A wire bondless package [34] based up on solder bump technology has also been developed to reduce the on-state voltage drop of the IGBTs for EV applications. The cell structure used for these IGBTs is shown in Fig.…”