200 W GaAs-based MODFET power amplifier for W-CDMA base stations

Ishida, Hideyuki; Yokoyama, T.; Furukawa, H.; Tanaka, Tsuyoshi; Maeda, Masaya; Morimoto, S.; Ota, Y.; Ueda, Daisuke; Hamaguchi, Chihiro

doi:10.1109/iedm.1999.824177

Cited by 9 publications

(1 citation statement)

References 4 publications

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“…Considering the superior properties of GaAs to those of Si, such as higher electron mobility and higher breakdown strength, there is a growing interest in developing high-power GaAs-based FETs for future-generation power amplifiers [2][3][4][5][6]. To date, 26-35V operation of GaAs FETs have been achieved by using either a field plate [2][3][4] or an overlapping gate [5,6], however, the breakdown voltages of these devices are still about 20V below that of the Si LDMOS. Therefore, new approaches other than field plate or overlapping gate are needed to further improve GaAs FET power performance.…”

Section: Introductionmentioning

confidence: 97%

28V planar GaAs MESFETs for wireless base-station power amplifiers

Yang¹,

Haldar

Ye³

et al. 2005

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.

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This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V gs = -1.5V) and 30V at on state (V gs = 0.5V). Under 28V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is −34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.

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Section: Introductionmentioning

confidence: 97%

28V planar GaAs MESFETs for wireless base-station power amplifiers

Yang¹,

Haldar

Ye³

et al. 2005

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.

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SiC Device Technologies

Östling,

Koo,

Domeij

et al. 2005

Encyclopedia of RF and Microwave Engineering

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Silicon carbide (SiC) devices have drawn considerable attention for use in various applications due to the interesting materials properties of SiC. Commercial products are now available for high‐voltage and high‐frequency applications. Prototype devices show promising performance, whereas materials issues are still a hinder for economically viable production of large‐area devices with high yield. This article reviews the more recent progress in SiC devices and process technology and presents the state‐of‐the‐art SiC devices as well as new application areas such as ferroelectric field‐effect transistors (FeFETs).

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