200GHz SiGe Hetero Bipolar Transistor Design

Eberhardt, J.; Kasper, E.

doi:10.1109/essderc.2000.194842

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…Merencanakan profil doping HBT SiGe acuan yang sesuai dengan data eksperimen HBT SiGe buatan IBM pada arah vertikal [12] , dengan beberapa penyesuaian yang dilakukan antara lain,. Pertemuan antara poli-Si (polysilicon) dan mono-Si (single crystal silicon) ditandai dengan adanya tekukan pada daerah pertemuan, dalam hal ini tekukan tersebut dianggap tidak aktif secara elektrik kemudian konsentrasi doping polisilikon 10 21 cm 3 serta pertemuan antara bahan tipe-n yang diberi doping As dan tipe-p yang diberi doping B, kemiringan profil doping emiter dalam simulasi diatur agar berpotongan dengan profil doping basis pada daerah lekukan seperti diperlihatkan pada Gambar 5, dengan garis yang berwarna adalah pendekatan model yang dilakukan.…”

Section: Hasil Dan Pembahasanunclassified

Rancangan Heterojunction Bipolar Transistor Silikon Germanium (Hbt’s Sige) Dengan Pendekatan Poisson Equation

Alamsyah

Saepuddin

2013

politeknologi

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Ideally performance of Heterojunction Bipolar Transistor (SiGe HBT's) is the Threshold Frequency (ft) and Maximum Frequency (fmax) and high current gain. In order to get the performance can be used the physics approach that that is heavy doping on the emitter and narrow base width. This research conducted at the design of SiGe HBT's based on a model approach three (3)-dimensional hydrodynamic approach to the Poisson equation with electron transport. Simulation using the software Bipole3 with input parameters based on models developed by IBM's first generation. Results of analysis and discussion show that the design of SiGe HBT's provide the frequency threshold (FT) 56 GHz with a deviation of 7% of the worth of a model developed by IBM. Keywords: HBT’s SiGe, Poisson Equation. ABSTRAK Kinerja ideal dari Heterojunction Bipolar Transistor (HBT’s SiGe) adalah Threshold Frequency ( ft ) dan Maximum Frequency ( fmax ) serta Current Gain yang tinggi. Untuk mendapatkan unjuk kerja yang tersebut dapat digunakan pendekatan physic yaitu heavy doping pada emitter dan lebar basis dibuat sempit (narrow base width). Pada riset ini dilakukan rancangan HBT’s SiGe berdasarkan pendekatan model tiga(3) dimensi hydrodynamic dengan pendekatan Poisson equation electron transport. Simulasi menggunakan perangkat lunak Bipole3 dengan parameter masukan berdasarkan model yang dikembangkan oleh IBM generasi pertama Hasil analisa dan pembahasan menunjukkan bahwa hasil rancangan HBT’s SiGe menghasilkan frekuensi threshold (fT) 56 GHz dengan deviasi senilai 7% terhadap model yang dikembangkan oleh IBM. Kata kunci: HBT’s SiGe, Persamaan Poisson

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Section: Hasil Dan Pembahasanunclassified

Rancangan Heterojunction Bipolar Transistor Silikon Germanium (Hbt’s Sige) Dengan Pendekatan Poisson Equation

Alamsyah

Saepuddin

2013

politeknologi

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“…The silicon germanium (SiGe) heterobipolar transistor (HBT) [1] enlarged tremendously the frequency domain of silicon based microelectronics. Several commercial producers offer SiGe-HBTs with 125-250 GHz transit frequency (f T ), the highest research climbed to a half terahertz f T -values [2].…”

Section: Introductionmentioning

confidence: 99%

Improved Compact Model for High Speed SiGe HBT Breakdown

Xu¹,

Kasper²

2008

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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High speed SiGe-HBTs provide only a small V CE voltage variation between the saturation region (low V CE ) and the breakdown at also rather low values. For high speed circuits it is unavailable to drive the SiGe HBT near the breakdown limits. In compact models used for circuit design the breakdown is described by the week avalanche approximation which is unsufficient for modern HBTs with short collector regions. We propose a more refined approximation which is based on the deed space concept for electrons to be accelerated up to the impact ionization energy. The model is implemented in the VBIC compact model.Index Terms -SiGe, HBT, Model, Impact ionization, Dead space, Avalanche effect, Compact Model, ADS.

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Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times

Eberhardt

Kasper

2001

Solid-State Electronics

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200GHz SiGe Hetero Bipolar Transistor Design

Cited by 7 publications

References 4 publications

Rancangan Heterojunction Bipolar Transistor Silikon Germanium (Hbt’s Sige) Dengan Pendekatan Poisson Equation

Rancangan Heterojunction Bipolar Transistor Silikon Germanium (Hbt’s Sige) Dengan Pendekatan Poisson Equation

Improved Compact Model for High Speed SiGe HBT Breakdown

Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times

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