20101 Stress Analyses in CMP Processing with Cu/low-k Structure

Kodera, Masahito; Fukuda, Akira; Mochizuki, Yoshihiro; Hiyama, Hirokuni; Tsujimura, Manabu

doi:10.1299/jsmekanto.2006.12.23

Cited by 2 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was also assumed that the horizontal frictional forces were 4.8 kPa (0.70 psi) on a Cu film, 4.8 kPa (0.70 psi) on a low-k film, and 5.9 kPa (0.86 psi) on a Ta film. 6,7,9) The horizontal friction of Cu had a coefficient of friction (COF) of 0.35, 10) showing good agreement with that observed in the actual CMP process. The COF of Ta (0.43) was calculated, comparing between the motor currents of the CMP table during polishing Cu and Ta.…”

Section: Methodssupporting

confidence: 64%

“…At the surface, the high stress field existed at both edges of the wiring, showing a good correspondence with the reported results. 6,7,9) Stress concentration was also observed along the sidewall of the trench. We analyzed each stress component along the sidewall of the trench, which were indicated by solid lines in Fig.…”

Section: Stress Distribution Along Sidewall Of Trenchmentioning

confidence: 95%

“…[5][6][7] We also confirmed that normal stress particularly concentrated at the edges of a Cu wiring depends on interlayer dielectric (ILD) modulus, CMP steps, and CMP downward pressure. 5) However, other stress fields, especially shear stress distribution, is not yet well understood owing to the very few studies 9) of them, although shear stress may induce the delamination of low-k films during CMP. 4) In this study, we determine the relation between the shear stress distribution in the depth direction during CMP and the ILD structure as assessed by FEM, and provided new suggestions from our results.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-k Structure

Kodera¹,

Mochizuki

Fukuda

et al. 2007

jjap

View full text Add to dashboard Cite

In current LSI devices, porous low-k films are adopted as interlayer dielectrics (ILDs). However, the extremely low Young's moduli of these films result in defects such as delamination, which are sometimes induced during chemical mechanical planarization (CMP). The main cause of delamination is thought to be shear stress induced by CMP downward pressure. In this study, we demonstrated that finite element method (FEM) results could be used to predict dangerous stress fields during CMP. It was revealed that shear stress concentrated on the ILD boundary with a large modulus difference. Moreover, stresses at dense lines were always lower than those at isolated lines. Furthermore, shear stress was sensitive to frictional force. The effect of a plasma-damaged layer on shear stress was quite limited. Consequently, these considerations provide a useful suggestion for future work on Cu/porous low-k-film fabrication as well as on the CMP of LSI devices.

show abstract

Section: Methodssupporting

confidence: 64%

Section: Stress Distribution Along Sidewall Of Trenchmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-k Structure

Kodera¹,

Mochizuki

Fukuda

et al. 2007

jjap

View full text Add to dashboard Cite

show abstract

“…Hence, we will focus on the indirect effect discussed by Perlwitz and Harnick (2004). The results of Kodera and Kuroda (2004) suggest that this indirect effect may be superposed on a more zonal effect reflecting the Arctic Oscillation and including the pressure fields over the North Pole and Mediterranean. Whether or not this is an expression of the direct effect cannot be judged within this study and remains an interesting question for further research.…”

Section: Introductionmentioning

confidence: 92%

Life cycles of North Atlantic teleconnections under strong and weak polar vortex conditions

Walter

Graf

2006

Quart J Royal Meteoro Soc

View full text Add to dashboard Cite

SUMMARYThis paper investigates the role of the strength of the polar stratospheric winter vortex in the dynamics of the life cycles of North Atlantic teleconnections. A new set of teleconnection patterns was produced from lowpass-filtered daily 300 hPa height data of NCEP (National Centers for Environmental Prediction) reanalysis data 1958-1998. All teleconnections are meridional dipoles, which to a certain degree resemble the North Atlantic Oscillation based on surface pressure data. There are two distinct teleconnections (one over the eastern and one over the western North Atlantic) during episodes of weak polar vortex, and only one, over the central North Atlantic, during strong polar vortex episodes. The teleconnections have periods of about two weeks. Stream function tendency analysis of the life cycles shows that the relatively simple resulting teleconnections evolve from very complex structures. During the growth phase of the teleconnection indices there are strong and systematic differences between the two polar vortex regimes. While in the weak vortex regime the anomaly growth is mainly driven by transient eddy vorticity fluxes from the low-frequency domain, in the strong vortex regime there is also low-frequency advection of relative vorticity resulting from the interaction of low-frequency eddies with stationary eddies.

show abstract

20101 Stress Analyses in CMP Processing with Cu/low-k Structure

Cited by 2 publications

References 0 publications

Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-k Structure

Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-k Structure

Life cycles of North Atlantic teleconnections under strong and weak polar vortex conditions

Contact Info

Product

Resources

About