21.1: Invited Paper: High Throughput MOTFT with Organic Etch‐Stopper and SiNx Gate Insulator

Abstract

Metal-oxide TFT (MOTFT) is promising for next generation high information content displays for both portable and TV/monitor applications. With current manufacturing capacity established originally for a-Si TFT, it would be ideal to develop a MOTFT structure and process most compatible with the equipment available on existing a-Si TFT line with minimal upgrade and corresponding capital investment. With such intention, we have developed bottom-gate, top-source/drain MOTFT with photopatternable organic etch-stopper (ES) with performance meeting product specifications. Backplane with such MOTFT can be made with same mask counts as that with BCE process.