21.6% monoPoly^TM cells with in-situ interfacial oxide and poly-Si layers deposited by inline PECVD

Polysilicon passivated junctions: The next technology for silicon solar cells?

“…[55][56][57][58][59][60] Due to this uniformity of results, recent attempts have instead focused on integrating the SiO x growth with the subsequent deposition of the Si layer, for example, using a plasma enhanced or low-pressure chemical vapor deposition (PE/LP CVD) chamber. [61][62][63] These too have already yielded results in line with those highlighted above.…”

“…65 After the initial work at Fraunhofer ISE, 66 many other research institutes have reported results using PECVD on par with those achieved by LPCVD. 54,57,62,100,67,102,103 Other single-side CVD methods that have been used to form poly-Si junctions include atmospheric pressure CVD (APCVD) and Hot Wire CVD, 68,104,105 although they are not as widespread. PVD such as sputtering and electron beam evaporation are very promising as a single-side deposition alternative.…”

Recent advancements in poly-Si/SiOxpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives

“…[68][69][70][71][72] For consistency, recent approaches have centered on combining the development of the oxide layer with the subsequent preparation of the Si lm, such as via utilizing PECVD or LPCVB chambers. [73][74][75] In 2015, Moldovan et al used three oxidation methods: HNO 3 (nitric acid at 110 C); DIO 3 (ozone in deionized water); and UV/ O 3 (ultraviolet ozone) to prepare ultra-thin tunneling oxide layers and they characterized these based on iV OC . 68 The results showed that when the substrate was an n-type Si wafer, the iV OC values of the passivation layers obtained via different preparation methods aer high-temperature annealing were higher than 720 mV, while the iV OC values of textured samples were also higher than 710 mV.…”

“…Numerous additional research institutions have reported ndings comparable to those obtained with LPCVD when employing PECVD. 67,70,74 In the research of F. Feldmann et al, it has been demonstrated that a PECVD system is capable of producing screen-printing-compatible TOPCon layers yielding recombination currents of $3 fA cm À2 and $200 fA cm À2 in the passivated and metallized regions, respectively. 133 However, PECVD technology has not yet been truly mass-produced, and there are still key technical issues to be resolved.…”