22.0% Efficient Laser Doped back Contact Solar Cells

Dahlinger, M.; Bazer-Bachi, B.; Roder, T. C.; Köhler, Jürgen; Zapf-Gottwick, Renate; Werner, Jürgen

doi:10.1016/j.egypro.2013.07.274

Cited by 28 publications

(23 citation statements)

References 5 publications

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“…Furthermore, the duration of the etch back adjusts the phosphorus concentration in the FSF. Passivation: After RCA cleaning, dry thermal oxidation around T = 1000 °C drives‐in the dopants and grows a silicon oxide which serves as a surface passivation layer. PECVD silicon nitride SiN x on the front side serves as anti‐reflection coating (ARC). Dielectric layers: From this step on, the solar cell process changes compared to the previously published process flow . Instead of SiN x we use a stack of PECVD SiO x and SiC x to increase the light‐trapping and isolate the metallization from the wafer. Laser step 3 (contact opening): Figure (c) illustrates the local laser ablation of the dielectric layer to define the contact areas, utilizing a 35 ns pulsed, frequency tripled Nd:YAG laser, emitting at a wavelength λ = 355 nm.…”

Section: Solar Cell Manufacturing Processmentioning

confidence: 99%

23.2% laser processed back contact solar cell: fabrication, characterization and modeling

Dahlinger

Carstens

Hoffmann

et al. 2016

Prog. Photovolt: Res. Appl.

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We describe the manufacturing process for interdigitated back contact back junction silicon solar cells based on laser processes, and present detailed results and analysis to our best cell efficiency of 23.24%. The manufacturing process features two laser doping steps, one for the boron doped emitter and one for the phosphorus doped back surface field. The saturation current densities of thermal oxide passivated laser doped regions are on par with furnace diffused silicon for high efficiency solar cells. Laser ablation locally defines the contact areas through the rear dielectric layer stack, and structures the rear aluminum metallization. The precision of the laser systems in conjunction with the optical setup yields line shaped doping traces with a width of 150 µm and a pitch below 500 µm. The measured optical and electrical properties of our solar cell agree well with 3D simulation results. The measured reflection, transmission, quantum efficiency and current voltage curves in dark and illuminated condition simultaneously agree well with simulation, based on the same data set, giving confidence in the result of a detailed free energy loss analysis. The bulk resistive and recombination losses are identified as the main loss contributors. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

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Section: Solar Cell Manufacturing Processmentioning

confidence: 99%

23.2% laser processed back contact solar cell: fabrication, characterization and modeling

Dahlinger

Carstens

Hoffmann

et al. 2016

Prog. Photovolt: Res. Appl.

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“…Some approaches for industrial interdigitated back contact solar cells (IBC) are published [1][2][3], but still, mainly due to the higher production costs, the market share of IBC solar cells is quite low. We recently presented laser doped back contact solar cells metallized with evaporated and photo-lithographic structured contacts with η = 22.0% [4]. To further reduce the production cost and make the whole process more industrial relevant, we apply standard screen-printed contacts and reach η = 21.4%.…”

Section: Introductionmentioning

confidence: 99%

Laser Doped Screen-printed Back Contact Solar Cells Exceeding 21% Efficiency

et al. 2014

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“…Scanning the wafer surface enables doping of arbitrarily shaped areas. This paper presents our record laser-doped back-contact solar cell with an efficiency η = 22.0% [19]. First, the principles of laser doping and the solar cell manufacturing process are described.…”

Section: Introductionmentioning

confidence: 99%

Laser-Doped Back-Contact Solar Cells

Dahlinger

Bazer-Bachi

Roder

et al. 2015

IEEE J. Photovoltaics

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We present laser-doped interdigitated back-contacted solar cells with a record efficiency η = 22.0%. The high versatility and spatial resolution of our laser doping process enable local n-type and p-type doping with a precision below 30 μm and avoid any masking for doping. Nevertheless, the presented solar cells use photolithography (masking) to define the contact area and metallization layout. Quasi-steady-state photoconductance measurements prove the low-saturation current density of the laser doping. We process solar cells with varied pitch and emitter fraction and compare their measured current density-voltage characteristics with a 3-D solar cell simulation. The good agreement of the simulation and experimental data allows a reliable efficiency forecast when optimizations are applied. Furthermore, the influence of the base-busbar region on solar cell performance is discussed.

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22.0% Efficient Laser Doped back Contact Solar Cells

Cited by 28 publications

References 5 publications

23.2% laser processed back contact solar cell: fabrication, characterization and modeling

23.2% laser processed back contact solar cell: fabrication, characterization and modeling

Laser Doped Screen-printed Back Contact Solar Cells Exceeding 21% Efficiency

Laser-Doped Back-Contact Solar Cells

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