22.2 A 300GHz-Band Phased-Array Transceiver Using Bi-Directional Outphasing and Hartley Architecture in 65nm CMOS

Abdo, Ibrahim; Gomez, Carrel da; Chun, Wu; Hatano, Kenji; Li, Qi; Liu, Chenxin; Yanagisawa, Kiyoshi; Fadila, Ashbir Aviat; Pang, Jian; Hamada, Hiroshi; Nosaka, Hideyuki; Shirane, Atsushi; Okada, Kei

doi:10.1109/isscc42613.2021.9365968

Cited by 43 publications

(9 citation statements)

References 6 publications

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“…The single-sideband (SSB) noise figure (NF), therefore, is very nearly equal to the conversion loss. FET resistive mixers were adopted, for example, in [11], [16], and [24]. We have indeed confirmed by simulation using lossless passive components that conversion loss and SSB NF as low as about 6 dB are possible as anticipated.…”

Section: Design a Cmos Receiversupporting

confidence: 72%

A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

Hara

Dong

Lee

et al. 2022

IEEE J. Solid-State Circuits

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A 76-Gbit/s 265-GHz CMOS receiver (RX) modularized with a WR-3.4 waveguide interface is presented. It is a mixer-first RX fabricated using a 40-nm CMOS technology. The primary design focus is simplicity and the resulting low noise and loss and high conversion gain (CG). To allow for both on-wafer and packaged measurements, ON-chip transmission lines are designed such that their characteristics are relatively insensitive to the presence or absence of adhesive covering the chip. The RX chip is flip-chip-mounted on a multilayer printed circuit board (PCB). Built into the PCB is a waveguide transition using double-resonant stacked patches for wideband operation. The CMOS RX module achieves the highest wireless data rate of 76 Gbit/s with 16 QAM, which is comparable to 80 Gbit/s reported previously for a CMOS RX with on-wafer probing measurement.

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Section: Design a Cmos Receiversupporting

confidence: 72%

A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

Hara

Dong

Lee

et al. 2022

IEEE J. Solid-State Circuits

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“…Table 1 [ 98, 123, 133, 144, 178‐185 ] shows some typical silicon‐based THz communication systems that have realized high data rate wireless communication. Related reports are mainly concentrated in major foreign universities and research institutes.…”

Section: Silicon‐based Communication Systemmentioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

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“…Standard approaches to increase the output power rely on massive radiator arrays [204]- [206] or a multitude of parallel frequency multipliers [207] but are limited to below 0 dBm radiated power, a value that can easily be achieved with a two-way SiGe frequency multiplier at much higher bandwidth [176]. Despite these deficits, a number of complex CMOS transceivers for IEEE 802.15.3d THz short-range data communication have been presented [208]- [210].…”

Section: Thz Cmosmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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22.2 A 300GHz-Band Phased-Array Transceiver Using Bi-Directional Outphasing and Hartley Architecture in 65nm CMOS

Cited by 43 publications

References 6 publications

A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

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