22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C

Halder, Arka; Nyssens, Lucas; Rack, Martin; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean‐Pierre

doi:10.1109/sirf53094.2022.9720052

Cited by 3 publications

(3 citation statements)

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“…With the enormous increase of electronics components in vehicles, automotive ICs located close to the engine, for instance, are subject to high temperature environment [24]. In [25], the effect of increased temperature up to 175°C on the 22 nm FD SOI MOSFET devices' RF and mm-wave performance metrics are presented through on-wafer measurements and extractions. The transistor threshold voltage (VT) was seen to reduce by 0.6 mV/°C over the temperature range of 300 to 450 K. When increasing the operating temperature from 300 to 450 K, a reduction of 21% and 14% was observed, respectively, for ft and fmax.…”

Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

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Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, Partially Depleted Silicon-on-Insulator (SOI) MOSFET is the mainstream technology for RF SOI systems. Fully Depleted (FD) SOI MOSFET is foreseen as one of the most promising candidates for the development of future lower power wireless communication systems operating in the millimeter-wave range. The high frequency performances of FD SOI transistors are presented at room but also at cryogenic and high temperature. Recently published results for FD SOI switches and low noise amplifiers are summarized. And finally, the potential interest and challenges to move from standard to high resistivity FD SOI substrates are discussed.

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Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

“…Obviously, the price to pay is a slight degradation of the transistor RF performance. For the nominal gate length of the 22FDX® NFET, ft at room temperature decreases approximately by 15% when the transistor is not biased at the peak of transconductance but at ZTC point [25].…”

Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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“…In this paper, the main interesting features of the FD SOI CMOS technology for RF and millimeter-wave applications are presented. Firstly, the low-power and high-frequency performance of FD SOI [10]- [12] featuring various types of back gate contacts are shown for operation at cryogenic [13] and high temperature [14]. The benefit of the back gate biasing to improve the RF noise characteristics [15] as well as the transistor linearity [16] is demonstrated.…”

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confidence: 99%