2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
DOI: 10.1109/icsict.2010.5667311
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22 nm node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor and its SOC with channel length less than 10nm for communication applications

Yuanfu Zhao
1
,
Yue Xu
2
,
Dong Bai
3
et al.
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