22 nm technology compatible fully functional 0.1 &amp;#x03BC;m&lt;sup&gt;2&lt;/sup&gt; 6T-SRAM cell

Haran, Bala; Kumar, Arvind; Adam, Lahir Shaik; Chang, Josephine; Basker, V.; Kanakasabapathy, S.; Horak, D.; Fan, S.; Chen, J.; Faltermeier, J.; Seo, Sang‐Hun; Burkhardt, Martin; Burns, Sean; Halle, Scott; Holmes, Steven J.; Johnson, Richard L.; Mclellan, Erin; Levin, T. M.; Zhu, Ying; Kuss, J.; Ebert, Alexander; Cummings, Jennifer A.; Canaperi, D.; Paparao, S.; Arnold, John; Sparks, T.; Koay, Chiew-Seng; Kanarsky, T.; Schmitz, Stefan; Petrillo, Karen; Kim, R.H.; Demarest, J.; Edge, L. F.; Jagannathan, H.; Smalley, M.; Berliner, N.; Cheng, Kuo-Hsing; LaTulipe, D.; Koburger, Charles W.; Mehta, S.; Raymond, M.; Colburn, Matthew; Spooner, T.; Paruchuri, Vamsi; Haensch, Wilfried; McHerron, D.; Doris, B.

doi:10.1109/iedm.2008.4796769

Cited by 26 publications

(25 citation statements)

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“…Recently, IBM has released information about the upcoming 22 nm technology node, which features an SRAM with areal density of 0.1 µm 2 [ 23 ]. The SRAM has dimensions of 0.18 µm " 0.554 µm and is shown in Fig.…”

Section: Seu Sensitivity Of Modern Soi Sramsmentioning

confidence: 99%

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

King

Reed

Weller

et al. 2010

IEEE Trans. Nucl. Sci.

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Section: Seu Sensitivity Of Modern Soi Sramsmentioning

confidence: 99%

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

King

Reed

Weller

et al. 2010

IEEE Trans. Nucl. Sci.

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“…DP technologies include numerous process variations, including spacer technologies, Litho-Etch-Litho-Etch (LELE), and Litho-Freeze-Litho-Etch (LFLE), which satisfy the target feature sizes and geometries. In fact, recent device work 1,2 has shown the ability of DP to supersede EUVL from a device scaling and performance point of view. This new "lithographic" approach represents a wholesale change in scaling for the industry, which is being driven far more by processing than by introducing new lithography hardware.…”

Section: Introductionmentioning

confidence: 99%

“…High index immersion remains a potential lithographic solution to further complement and extend the applications of DP technologies to smaller dimensions or relaxing k 1 . 3 The high-index current status and development challenges are discussed below.…”

Section: Introductionmentioning

confidence: 99%

High index 193 nm immersion lithography: the beginning or the end of the road

Zimmerman

Rice

Piscani³

et al. 2009

SPIE Proceedings

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For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithography by developing a set of high index materials. For high index immersion lithography (HIL) to enable 1.70NA imaging, a high index lens element with an absorbance < 0.005/cm, a fluid with an index of ≥ 1.80, and a resist with an index >1.9 are needed. This paper reviews the success or failure of various HIL components and presents the top final material prospects and properties in each category.Since this abstract was submitted, the industry has decided to cease any effort in HIL, not because of fundamental showstoppers but because of timing. This choice was made even though the only currently available technology the can enable 32 nm and 22 nm manufacturing is double patterning. This may represent a paradigm shift for the semiconductor industry and lithography. It may very well be that using lithography as the main driver for scaling is now past. Due to economic forces in the industry, opportunity costs will force performance scaling using alternative technology.

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Section: Introductionmentioning

confidence: 99%

“…The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node [3] .This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography.…”

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confidence: 99%

Fundamental study of optical threshold layer approach towards double exposure lithography

Berro

Cho

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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ABSTRACT193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node [1] . Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability [2] . The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node [3] .This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO) [4][5] . However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation [4][5] . This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

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22 nm technology compatible fully functional 0.1 μm<sup>2</sup> 6T-SRAM cell

Cited by 26 publications

References 0 publications

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

High index 193 nm immersion lithography: the beginning or the end of the road

Fundamental study of optical threshold layer approach towards double exposure lithography

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