23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

Tong, Xiaodong; Zhang, Shiyong; Peng, Zheng; Xu, Jianxing; Wang, Rong

doi:10.1002/mop.31814

Cited by 7 publications

(5 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared to the widespread Si- and GaAs-based semiconductors, emerging GaN high-electron-mobility transistors (HEMTs) have a large material bandgap (3.4 eV) and excellent thermal tolerance, allowing them to run at elevated drain voltages, power densities, and ambient temperatures and thus support smaller form factors. Moreover, they feature a high electron saturation velocity and port resistances with low parasitic capacitances, making them ideal for broadband high-efficiency amplifier designs in the mmW regime [ 17 , 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks

et al. 2023

View full text Add to dashboard Cite

This paper presents a broadband GaN microwave monolithic integrated circuit driver amplifier (MMIC DA) with compact dimensions of 1.65 mm × 0.78 mm for 5G millimeter-wave communication. The optimal impedance domain satisfying the preset goals was first acquired using the simplified load-pull procedure and small-signal simulations, followed by a weighted average method to determine the reference center matching point from which the optimal intrinsic load can be deduced. By means of de-embedding load-pull contours, modeling based on theoretical analysis, and simulation fitting for parameter identification, the nonlinear output capacitance and a series RLC model circuit approximating the input impedance response of the stabilized transistor were extracted. Under the design principle of fully absorbing the parasitic parameters of the device, explicit formulas and tabulated methods related to the Chebyshev impedance transformer were applied to construct filter-based synthesized matching networks at each stage and finally convert them into an implementable mixed-element form via the single-frequency equivalence technique. Measured on-wafer pulsed results for the proposed two-stage DA across 24–30 GHz demonstrated up to 31.1 dBm of saturated output power (Psat) with less than 1 dB total fluctuation, 19.3 ± 1 dB of small-signal gain, and 39.8% of peak power-added efficiency (PAE) at the mid-frequency.

show abstract

Section: Introductionmentioning

confidence: 99%

An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks

et al. 2023

View full text Add to dashboard Cite

show abstract

“…This paper details a compact and highly efficient GaN MMIC PA tailored for the 24-30 GHz range using OMMIC's 0.1 µm GaN-on-Si process [21]. The development of PAs mostly revolves around impedance matching to make power cells perform well.…”

Section: Introductionmentioning

confidence: 99%

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

Peng

Zhang

2023

Electronics

View full text Add to dashboard Cite

This paper presents the design procedure of an efficient compact monolithic microwave integrated circuit power amplifier (MMIC PA) in a 0.1 μm GaN-on-Si process for 5G millimeter-wave communication. Load/source-pull simulations were conducted to correctly create equivalent large-signal matching models for stabilized power cells and to determine the optimal impedance domain. The shorted stub with bypass capacitors minimizes the transistor’s output reactance, simplifying the matching objective to an approximate real impedance transformation (IT). With miniaturization as the implementation guide, explicit formulas and tabulated methods based on mathematical analysis were applied to synthesize the filtering matching networks (MNs) for the input and output stages. In addition, a CAD-dependent numerical optimization approach was used for the interstage MN that needs to cope with high IT ratio and complex loads. The continuous-wave (CW) characterization for the proposed two-stage PA demonstrated 19.8 ± 0.7 dB of small-signal gain, very flat output power (Pout) and power-added efficiency (PAE) at 4 dB gain compression of 32–32.4 dBm and 34–34.6%, respectively, over 24–30 GHz, with 37.1% of peak PAE at mid-frequency.

show abstract

“…A band-pass filter was designed using closed-form solutions to improve the input return loss over broadband. The proposed PA was fabricated in OMMIC's 0.1 µm GaN-on-Si process, known as D01GH [19]. The experimental results are summarized and compared to those from previously published studies.…”

Section: Introductionmentioning

confidence: 99%

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

et al. 2022

View full text Add to dashboard Cite

A broadband GaN MMIC power amplifier (PA) with compact dimensions of 1.94 × 0.83 mm2 is presented for 5G millimeter-wave communication. To guarantee output capability at the operating band edges where serious performance degradation is likely to occur, the appropriate large-signal matching model and optimal impedance domain need to be carefully determined through load-pull analysis. Broadband matching networks (MNs) in the lowpass form are thereafter developed based on the Chebyshev filter synthesis theory. Using high-pass interstage MN in conjunction with parallel RC lossy circuits to compensate for the transistor’s negative gain roll-off slope ensures a flat frequency response. The input MN is designed as a band-pass filter due to the reactance extracted from the input side of the stabilized device exhibiting series LC resonance characteristics. Measured on-wafer pulsed results for the proposed three-stage PA demonstrate up to 30.9 dBm of output power, more than 28.6 dB of small-signal gain, and a peak power-added efficiency (PAE) of 35.6% at 27 GHz. Both uniform gain and saturated output power (Psat) are achieved across 24–30 GHz with fluctuations of less than 0.8 dB.

show abstract

23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

Cited by 7 publications

References 5 publications

An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks

An Efficient 24–30 GHz GaN-on-Si Driver Amplifier Using Synthesized Matching Networks

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

Contact Info

Product

Resources

About