45th European Conference on Optical Communication (ECOC 2019) 2019
DOI: 10.1049/cp.2019.1022
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239.3-Gbit/s net rate PAM-4 transmission using directly modulated membrane lasers on high-thermal-conductivity SiC

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Cited by 25 publications
(25 citation statements)
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“…Improved metallization in QD lasers is necessary to minimize joule heating effect and improve energy efficiency, and integrated thermal shunt structure will add another layer of positive thermal management to make it more robust. QD intrinsic material property-determined poor direct modulation bandwidth is hard to overcome, but higher-speed MOS capacitor modulation showing 15 GHz bandwidth in the same 50 μm diameter design [26] and photon-photon resonance [101], [10] are being explored to be efficient alternative solutions to reach 25 Gb/s target. New CMOS driver chips fabricated at 28 nm node were just arrived from the foundry during manuscript preparation.…”
Section: Discussionmentioning
confidence: 99%
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“…Improved metallization in QD lasers is necessary to minimize joule heating effect and improve energy efficiency, and integrated thermal shunt structure will add another layer of positive thermal management to make it more robust. QD intrinsic material property-determined poor direct modulation bandwidth is hard to overcome, but higher-speed MOS capacitor modulation showing 15 GHz bandwidth in the same 50 μm diameter design [26] and photon-photon resonance [101], [10] are being explored to be efficient alternative solutions to reach 25 Gb/s target. New CMOS driver chips fabricated at 28 nm node were just arrived from the foundry during manuscript preparation.…”
Section: Discussionmentioning
confidence: 99%
“…For more information, see http://creativecommons.org/licenses/by/4.0/ relieving many optical link design constrains. Compared with other bandwidth-scaling approaches like coherent communications [9] or ultra-high speed amplitude modulations [10], [11], DWDM approach along with on-off-key (OOK) modulation at medium data rate per channel, e.g., 10-25 Gb/s, can lead to an overall optimal solution for little latency, energy efficient photonics and driving electronics [12], and possibility to enable a high-radix switch architecture to minimize hops between computing nodes [13].…”
Section: Introductionmentioning
confidence: 99%
“…The DML was fabricated using our membrane-III-V-on-SiC technology [6] and had a similar cavity design to the one in [5]. As a first step, a thin III-V membrane composed of InGaAlAs multi-quantum wells (MQWs) was directly-bonded to a SiC substrate through a SiO2 buffer layer.…”
Section: A Membrane Iii-v-on-sic Passive-feedback Lasermentioning
confidence: 99%
“…cost-per-bit, power consumption, and device footprints. In particular, IM/DD systems that utilize wide-bandwidth directly-modulated lasers (DMLs) [2][3][4][5] are arguably the most energy-efficient approach, which could pose such lasers among the leading technologies to support ICT growth in the future.…”
Section: Introductionmentioning
confidence: 99%
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