2020
DOI: 10.1016/j.solmat.2020.110643
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25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers

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Cited by 140 publications
(119 citation statements)
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“…The high J sc was confirmed by EQE and its integrated current density curves, Figure 4b, which is close to the EQE level of the SHJ solar cells. [145] An FF of 82% surpasses all previous work for CNT -…”
Section: Carbon Nanotubes In Silicon Photovoltaicsmentioning
confidence: 75%
See 1 more Smart Citation
“…The high J sc was confirmed by EQE and its integrated current density curves, Figure 4b, which is close to the EQE level of the SHJ solar cells. [145] An FF of 82% surpasses all previous work for CNT -…”
Section: Carbon Nanotubes In Silicon Photovoltaicsmentioning
confidence: 75%
“…The high J sc was confirmed by EQE and its integrated current density curves, Figure 4b, which is close to the EQE level of the SHJ solar cells. [ 145 ] An FF of 82% surpasses all previous work for CNT‐Si heterojunction solar cells, while being a record for dopant‐free contact architectures, including hole‐selective MoO x and PEDOT based Si solar cells. [ 123c,146 ] We speculated that the high FF was related to the CNTs themselves and that it was a result of their higher carrier mobility.…”
Section: Carbon Nanotubes In Silicon Photovoltaicsmentioning
confidence: 99%
“…This is 0.6% higher than the best device using a thin silicon oxide passivating layer combined with poly-silicon contacts [5]. However, efficiency in both-side contacted heterojunction devices hovers at 25.1% [6], [7], whereas devices using a homojunction at the front side (and a passivating contact on the rear side) recently reached up to 26.0% efficiency [8]. This difference is principally due to a lower short-circuit current density (JSC) for the SHJ cell, notably due to parasitic absorption of short-wavelength light in the window-layer stack (i.e.…”
mentioning
confidence: 84%
“…layers deposited on the light-incoming side of the wafer) when employing a full-area passivating-contact design [9]. A highest efficiency of 25.1% was interestingly obtained with either a hole-selective [6] or electron-selective [7] contact placed on the light-incoming side.…”
mentioning
confidence: 99%
“…[ 1 ] Recently, Hanergy demonstrated a new bifacial SHJ record with certified efficiency of 25.11% from one side illumination. [ 2 ] The impressive 84.98% fill factor (FF) has eliminated the fears that SHJ solar cell could not reach high FFs. [ 3,4 ] However, the short‐circuit current density ( J sc ) of 39.55 mA cm −2 was much lower compared with the other two sides contacted silicon champion solar cells, like passivated emitter and rear contact cell or tunnel oxide passivated contacted solar cell, which have a J sc above 40 mA cm −2 .…”
Section: Introductionmentioning
confidence: 99%