26.1% thin-film GaAs solar cell using epitaxial lift-off

Inverted thin film InGaP/GaAs tandem solar cells for CPV applications using epitaxial lift off

“…ELO does not affect the quality of the solar cell. We have demonstrated this for a single junction GaAs thin-film cell which showed a record efficiency of 26.1% under AM1.5G conditions [7]. This is the same efficiency as obtained with our regular GaAs cell on substrate.…”

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

“…In figure 5a the EQE of an n on p thin-film ELO cell on an Au carrier is plotted before AAT and after 9 days at 200 ○ C and in figure 5b the EQE of an n on p ELO thin-film cell on a Cu carrier is plotted before AAT, after 8.5 days and after 37 days at 200 ○ C. After AAT the interference fringes in the 700-900 nm range caused by the reflection of the mirror [41] have disappeared for the cell on a Cu carrier, but remain visible for the cell on an Au carrier. This clearly shows that in the cells on a Cu carrier the mirror properties of the Au are severely degraded upon AAT.…”

Microstructure Analysis of Cdte/CDS Thin-Film Solar Cells for Optimization of Devices Fabricated at Low Temperature With Pulsed Laser Deposition

“…This issue may be resolved ultimately in epitaxial solar cells, but the large 10% lattice mismatch between CdS and CdTe can lead to highly strained interface between them, which prompts formation of defects as traps for charge carriers. [12] Before this issue is fully addressed, the grain size in polycrystalline CdTe/CdS thin film solar cells will have to compromise to much smaller than the CdTe thickness to avoid shorting but large enough to minimize the amount of GBs and hence charge recombination.…”