26.5 A 0.7V 1.5-to-2.3mW GNSS receiver with 2.5-to-3.8dB NF in 28nm FD-SOI

This paper presents a simple and efficient methodology for Resistive Feedback LNAs (RF-LNAs) design which uses the inversion level of the transistor as a design parameter in order to optimize the energy efficiency. The method uses a simple 4 parameter-based model valid in all regions of operation and allows a preliminary sizing based on an analytical study. A practical design in a 28 nm FD-SOI technology shows that this methodology is well suited for design at low to moderate inversion level in an advanced technology for which simulationbased studies are often used by designer as early sizing stage. The designed LNA consumes 0.57 mW and achieves an 18.4 dB gain with 3.3 dB of NF.

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26.5 A 0.7V 1.5-to-2.3mW GNSS receiver with 2.5-to-3.8dB NF in 28nm FD-SOI

Cited by 8 publications

References 5 publications

Design of ULV ULP LNAs Exploiting FBB in FDSOI 28nm Technology

Design of ULV ULP LNAs Exploiting FBB in FDSOI 28nm Technology

A GPS Synchronized, Long-Range Uplink-Only Radio Designed for IoT

A g_m/I_D Design Methodology for 28 nm FD-SOI CMOS Resistive Feedback LNAs

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26.5 A 0.7V 1.5-to-2.3mW GNSS receiver with 2.5-to-3.8dB NF in 28nm FD-SOI

Cited by 8 publications

References 5 publications

Design of ULV ULP LNAs Exploiting FBB in FDSOI 28nm Technology

Design of ULV ULP LNAs Exploiting FBB in FDSOI 28nm Technology

A GPS Synchronized, Long-Range Uplink-Only Radio Designed for IoT

A gm/ID Design Methodology for 28 nm FD-SOI CMOS Resistive Feedback LNAs

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A g_m/I_D Design Methodology for 28 nm FD-SOI CMOS Resistive Feedback LNAs