26% efficient magnesium-doped AlGaAs/GaAs solar concentrator cells

Abstract

AlGaAs/GaAs heteroface solar concentrator cells which exhibit 26% efficiency at 753 sun (AM1.5, 100 mW/cm2) have been fabricated using metalorganic chemical vapor deposition. Magnesium was used as the dopant in the p-type emitter and selenium was used as the n-type dopant. The design parameters of the solar cell were determined with the aid of a computer program which realistically models the performance of such cells.

Engineering flexible dye-sensitized solar cells for portable electronics

“…Among current portable powers, the flexible film solar cells (FFSCs) are a promising type power source due to their excellent portability, sustainable output, autogenic transformation and remarkable conversion efficiency [10][11][12][13][14]. The FFSCs, such as flexible amorphous silicon (α-Si, 13.6% [15]), flexible copper indium gallium selenide (CIGS, 21.7% [16]), flexible cadmium telluride (CdTe, 16.5% [17]), flexible gallium arsenide (GaAs, 26.7% [18]), flexible perovskite solar cells (PSC, 17.3% [19]) and flexible dye-sensitized solar cells (FDSSCs), all have been investigated widely and achieved remarkable conversion efficiency. However, highly technical requirements for fabrication (α-Si, CIGS, CdTe, GaAs), toxicity of materials (CdTe, GaAs, PSC) and high cost limit their applications [20][21][22][23][24].…”

Nanoporous GaN/n-type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells

“…[1][2][3][4][5][6][7][8] Bandgap tunability (1.5 -3.1 eV), a high absorption coefficient (10 4 -10 5 cm −1 ), low exciton binding energy (< 50 meV), and simplicity of fabrication, are some of the few properties that played a key role in cementing the place of halide perovskites among solar cell materials. [9][10][11][12][13][14] However, because dopant-host interactions in perovskites are distinct from those of traditional semiconductor materials (for example, Si:B, GaAs:Mg, and AlN:Si), [15][16][17] perovskites have not yet been formed into p-i-n junctions through doping. Thus, heterogeneous materials need to be integrated to create junctions that promote the charge extraction and collection in PSCs.…”

High Efficiency Multiple Bandgap Solar Cell Research.

“…19 2 GaAs 1.4 eV top band gap curve has not been calculated for Figure 19, but such a curve should be similar to the 1.5 eV band qap result.…”