27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Nakayama, Koji; Mizushima, Tomonori; Takenaka, Kensuke; Koyama, Akihiro; Kiuchi, Yuji; Matsunaga, Shinichiro; Fujisawa, Hiroyuki; Hatakeyama, Tatsuko; Takei, Masahiro; Yonezawa, Yoshiyuki; Kimoto, Tsunenobu; Okumura, Hajime

doi:10.1109/ispsd.2018.8393686

Cited by 21 publications

(10 citation statements)

References 6 publications

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“…Note that the various sets of impact ionization parameters [38] generates a relatively large variation in breakdown voltage capability, however, by employing Y. Zhao [40] and T. Hatakeyama [41] coefficients, the simulated result correlates reasonably well with [7], but with discrepancies for lower ion implantation doses. The dose window by N. Kaji et al [7], achieves a wider dose plateau, while our TCAD simulation results indicate a more triangular-shaped dose window, similar to the SM-JTE simulations (Synopsys Dessis) in [9]. The highest breakdown voltage of approximately 21.3 kV is achieved for an implant dose1 = 2.6×10 13 cm -2 .…”

Section: A 20 Kv Class Sic Pin Diode Comparisonsupporting

confidence: 78%

“…The space-modulated, two-zone JTE (SM-JTE) is one of the most efficient experimentally demonstrated termination structures, as indicated in Fig. 1, which has been used in state-of-art devices reaching blocking voltage levels up to 27 kV [7]- [9]. Therefore, SM-JTE is used as a baseline structure for the termination region in the TCAD model to predict the required length for UHV devices.…”

Section: A Space-modulated Two-zone Jte (Sm-jte)mentioning

confidence: 99%

“…The material properties of (4H-) Silicon Carbide (SiC) allow manufacturing of devices that withstand higher electric fields than Silicon (Si) based counterparts and thus achieves higher breakdown voltage, VB, capabilities, theoretically up to 50 kV [3]- [5]. The persistent research effort in developing SiC material processing and semiconductor device design, has demonstrated bipolar charge-carrier devices with blocking voltage capabilities as high as 27 kV [6]- [9]. However, a carefully designed junction termination extension (JTE) structure is required to relax the electric field at/around the active region of the device and redistribute the field through lateral variation of equipotential flux contours into the termination region.…”

Section: Introductionmentioning

confidence: 99%

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Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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Section: A 20 Kv Class Sic Pin Diode Comparisonsupporting

confidence: 78%

Section: A Space-modulated Two-zone Jte (Sm-jte)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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“…Among the many kinds of particle irradiation, electron irradiation is widely applied because of its high availability. Due to the bipolar structure, the forward current of PiN diodes strongly depends on the conductivity modulation of the drift layer, i. e. the carrier lifetime [15], [16]. While the latter is determined by the deep-level defects, which may be introduced by irradiation [17]- [20].…”

Section: Introductionmentioning

confidence: 99%

Electron Radiation Effects on the 4H-SiC PiN Diodes Characteristics: An Insight From Point Defects to Electrical Degradation

Qin

et al. 2019

IEEE Access

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Silicon carbide (SiC) devices have shown substantial promise in realizing ultrahigh-voltage and high power, and have been usually considered as a potential candidate for high radiation levels applications. However, in this work it is found that the SiC P-intrinsic-N (PiN) diodes are sensitive to the electron irradiation, which exerts significant influence on the device characteristics. The physical mechanisms behind these behaviors are studied by probing the production of point defects and the evolution of carrier lifetime in the SiC epilayers after irradiation. It is found that the forward current is significantly reduced by irradiation and the specific on-resistance monotonously increases with the increasing electron fluences, which is resulted from the deteriorated conductivity modulation effects in the epilayer due to the enhanced carrier recombination from the radiation induced deep-level defects, such as the carbon vacancy (V C ), silicon vacancy (V Si ) and V C +V Si complexes. Inversely, no significant change is observed in the reverse leakage current of 4H-SiC PiN diodes, and the breakdown voltage even slightly increases after electron irradiation, which are ascribed to the suppressed carrier generation arising from the point defects in 4H-SiC with a wide bandgap and the carrier-removal effects caused by the acceptor like point defects generated during irradiation, respectively.INDEX TERMS Silicon carbide, point defects, carrier lifetime, electron irradiation, PiN diodes.

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“…Conductivity modulation effects make PiN bipolar devices have higher conductance characteristics, which shows that PiN rectifiers have lower on-resistance than 10 kV-class unipolar SiC diodes (>100 mΩ·cm 2 ) in many intensive studies [10,11]. In these studies, the multi-zone junction termination extension (JTE) technique-involving space-modulated JTE, multiple ring modulated JTE, mesa-etched JTE, and Hybrid JTE-is the typical edge termination technology for achieving a high blocking efficiency [12][13][14][15]. However, JTE structure suffers from a narrow optimum implantation dose window and SiC surface charge, which leads to breakdown voltage degradation and reliability problems.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

Liu

Yang

Wang³

et al. 2019

Materials

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In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation field limiting ring (MGM-FLR) for extremely high-power handling applications was applied and investigated. The reverse blocking voltage of 13.4 kV, close to 95% of the theoretical value of parallel plane breakdown voltage, was obtained at a leakage current of 10 µA for a 100 µm thick, lightly doped, 5 × 10 14 cm −3 n-type SiC epitaxial layer. Meanwhile, a fairly low differential on-resistance of 2.5 mΩ·cm 2 at 55 A forward current (4.1 mΩ·cm 2 at a current density of 100 A/cm 2 ) was calculated for the fabricated SiC PiN with 0.1 cm 2 active area. The highest Baliga's figure-of-merit (BFOM) of 72 GW/cm 2 was obtained for the fabricated SiC PiN diode. Additionally, the dependence of the breakdown voltage on transition region width, number of rings in each zone, as well as the junction-to-ring spacing of SiC PiN diodes is also discussed. Our findings indicate that this proposed device structure is one potential candidate for an ultra-high voltage power system, and it represents an option to maximize power density and reduce system complexity.

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27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Cited by 21 publications

References 6 publications

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Electron Radiation Effects on the 4H-SiC PiN Diodes Characteristics: An Insight From Point Defects to Electrical Degradation

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

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