27 dB gain III–V-on-silicon semiconductor optical amplifier with &gt; 17 dBm output power

Gasse, Kasper Van; Wang, Ruijun; Roelkens, Günther

doi:10.1364/oe.27.000293

Cited by 57 publications

(37 citation statements)

References 22 publications

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“…This redshift indicates self-heating, which can be explained by the higher thermal insulation between the device and the substrate in this stack, as compared to active devices integrated on SOI, which typically only has 2 µm of TOX below the waveguide layers. Higher gains and saturation powers can be achieved using longer devices with dedicated III-V epi-stacks and optimized waveguide cross sections [30,31].…”

Section: A Iii/v-on-si 3 N 4 Amplifiermentioning

confidence: 99%

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Beeck

Haq

Elsinger

et al. 2020

Optica

105

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The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate.

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Section: A Iii/v-on-si 3 N 4 Amplifiermentioning

confidence: 99%

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Beeck

Haq

Elsinger

et al. 2020

Optica

105

View full text Add to dashboard Cite

show abstract

“…The on-chip gain of the SOA doesn't increase beyond 140 mA in the case of full-coupling at 1565 nm wavelength and 160 mA at 1548 nm wavelength for the partial coupling SOA. The measured data are then fitted with an expression that relates the gain G to the input power P in to estimate gain saturation power P sat and small signal gain G 0 : [22,23] G(P in ) = G 0 1 +…”

Section: Device Characterizationmentioning

confidence: 99%

“…The noise figure values are comparable to the values previously reported in the literature for III-V-on-Si SOA. [22,25]…”

Section: Device Characterizationmentioning

confidence: 99%

Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers

Haq

Kumari

Gasse

et al. 2020

Laser & Photonics Reviews

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The micro-transfer-printing of prefabricated C-band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays of III-V SOAs are fabricated on the source InP wafer. These can then be micro-transfer-printed on the target SOI photonic circuits in a massively parallel fashion. Additionally, this approach allows for greater flexibility in terms of integrating different epitaxial layer structures on the same SOI waveguide circuit. The technique allows integrating SOAs on a complex silicon photonic circuit platform without changing the foundry process-flow. Two different SOA designs with different optical confinement factor in the quantum wells of the III-V waveguide are discussed. This allows tuning the small-signal gain and output saturation power of the SOA. The design with higher optical confinement in the quantum wells has a small-signal gain of up to 23 dB and an on-chip saturation power of 9.2 mW at 140 mA bias current and the lower optical confinement factor design has a small-signal gain of 17 dB and power saturation of 15 mW at 160 mA of bias current.

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“…In this work, to better investigate on the properties of pulse stretcher based on the designed dispersive Si3N4 slot waveguides, and to further understand the impacts of the dispersion and the nonlinearity, the amplification process is not included. Otherwise, the bandwidth constraints in the on-chip CPA system could be from the integrated amplifier, of which the best bandwidth could only cover slightly above 100 nm [49][50][51]. Moreover, the gain of integrated amplifiers, including semiconductor optical amplifiers (SOA) [49], Er-doped waveguide amplifiers [50], and quantum dot amplifiers [51], are not flat over the bandwidth.…”

Section: ⅲ Performance In On-chip Cpa Systemmentioning

confidence: 99%

“…Otherwise, the bandwidth constraints in the on-chip CPA system could be from the integrated amplifier, of which the best bandwidth could only cover slightly above 100 nm [49][50][51]. Moreover, the gain of integrated amplifiers, including semiconductor optical amplifiers (SOA) [49], Er-doped waveguide amplifiers [50], and quantum dot amplifiers [51], are not flat over the bandwidth. Octave-spanning optical parametric amplifier based on silicon-rich nitride waveguide has been proposed, which has the potential to serve as the amplifying element in the on-chip CPA system [52].…”

Section: ⅲ Performance In On-chip Cpa Systemmentioning

confidence: 99%

Octave-Spanning Dispersive Slot Waveguide Based Chip-Level Ultrashort Pulse Stretcher

et al. 2020

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A silicon nitride horizontal slot waveguide with silicon dioxide cladding is designed to achieve flat negative dispersion (<-600 ps/(nm•km)) over an octave-spanning bandwidth (782 to 2100 nm). Simulations show that, when a 10-fs pulse with 1-W peak power is input into a 5-cm long waveguide, the pulse width becomes 448 times wider and its peak power is reduced to 2.23×10-3 W. After passing through another ideal positive dispersion element, we find that the output pulse peak power can be recompressed close to 1 W in the case of different input pulse widths. Moreover, for the input pulse with a much higher peak power, the pulse width of the output pulse can be compressed to a much narrower level because of the spectral broadening introduced by optical nonlinearity. A 100-fs input pulse with 10-kW peak power can be compressed to 12.5 fs with a peak power of 63 kW. Considering the time-domain broadening and the peak power reduction, such a slot waveguide with a flat negative dispersion could be used as a time stretcher for 10-fs level pulse in on-chip chirped pulse amplification (CPA) system. INDEX TERMS Stretcher, dispersion, silicon photonics, slot waveguide, integrated optics.

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27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Cited by 57 publications

References 22 publications

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers

Octave-Spanning Dispersive Slot Waveguide Based Chip-Level Ultrashort Pulse Stretcher

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