far the most widely studied for solar-cell applications in emerging photovoltaic (PV) technology. Wide-bandgap perovskites are attractive as top cells for tandem applications because they are cost-effective and have perfect optoelectronic properties and tunable bandgaps (1.64-1.72 eV). [1] Reducing thermalization losses by stacking wide-bandgap and narrow-bandgap (1.1 eV) absorbers can overcome the Shockley-Queisser efficiency limit of 33.7% for singlejunction cells. [2] Wide-bandgap perovskites used in perovskite/silicon tandem systems reported to date typically contain more than 20% Br, which leads to inevitable phase separation. [3][4][5][6][7][8][9] Many studies into single-junction solar cells have shown that the performance of a wide-bandgap mixed halide perovskite is limited by its relatively low photovoltage. [10][11][12][13] Although various methods have been proposed to suppress phase segregation, the power conversion efficiencies (PCEs) of devices, especially those based on nickel oxide (NiO x ) as the hole layer, need to be further improved. [14][15][16][17][18][19] NiO x nanoparticles (NPs-NiO x ) are potential candidates for wide-bandgap hole-harvesting layers in perovskite/silicon tandem solar cells because they are inexpensive, stable, and easily scaled up. [7,[20][21][22] However, organic polymers, such as
Nickel oxide (NiO x ) is an attractive hole-transport material for efficient and stable p-i-n metal-halide perovskite solar cells (PSCs). However, an undesirable redox reaction occurs at theNiO x /perovskite interface, which results in a low open-circuit voltage (V OC ), instability, and phase separation of the NiO x -based wide-bandgap perovskite (Br > 20%). In order to simultaneously address the abovementioned phase separation problem and redox chemistry at the perovskite/NiO x interface, the bandgap is widened from 1.64 to 1.67 eV by adding inorganic CsPbCl 3 -clusters (3 mol%) to the Cs 22 Br 15 perovskite precursor solution. Moreover, adding extra 2 mol% CsCl enriches the NiO x /perovskite interface with Cl, thereby preventing the redox reaction at the interface, while controlling the Br content to within 15% improves the photostability of the wide-bandgap perovskite. Consequently, the power conversion efficiency (PCE) of a single-junction p-i-n PSC increases from 17.82% to 19.76%, which leads to the fabrication of highly efficient monolithic p-i-n-type NiO x -based perovskite/silicon tandem solar cells with PCEs of up to 27.26% (certified PCE: 27.15%). The perovskite to an n-i-p-type perovskite/ silicon tandem solar cell is also applied to deliver a V OC of 1.93 V and a final efficiency of 25.5%. These findings provide critical insight into the fabrication of highly efficient and stable wide-bandgap perovskites.