28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

Yoshida, Shoji; Oshima, Ryuji; Makita, Kikuo; Ubukata, Akinori; Sugaya, Takeyoshi

doi:10.1002/solr.202100948

Cited by 14 publications

(16 citation statements)

References 32 publications

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“…At 28.0% conversion efficiency, this AlInP‐passivated 2J surpasses the 26.9% efficient AlGaInP‐passivated 2J demonstrated by Shoji et al 4 The AlInP‐passivated 2J is near to the 28.3% efficient AlGaInP‐passivated 2J that Shoji et al demonstrated after adding an AlGaInP BSF, which yielded an additional improvement in V OC 6 . We expect to observe a similar boost in V OC by integrating an AlGaInP BSF into our current structure.…”

Section: Resultssupporting

confidence: 57%

“…The GaInP emitter appears to have more Si than this background level. This may indicate that the AlInP window grown prior causes Al and Si contamination, albeit to a lesser degree than that observed by Shoji et al 6 The O concentration peaks at $2 Â 10 18 cm À3 and then decays rapidly to the instrument background in the subsequently grown GaAs absorber. This result is consistent with those of a prior study that observed low O incorporation within epitaxial GaAs in the presence of surface segregated O and ambient O.…”

Section: Alinp Materials Characterizationmentioning

confidence: 73%

“…However, recent work employing AlCl 3 , an alternative Al‐containing precursor to AlCl, and uncracked hydrides resulted in the successful growth of AlGaAs and Al(Ga)InP materials in the HVPE environment 3,4 . In addition, Al‐containing materials were successfully integrated in III–V solar cell devices as passivating AlGaAs 5 and AlGaInP 4,6 window layers. This led to a conversion efficiency as high as 28.3% for a GaInP/GaAs dual‐junction cell that utilized AlGaInP as both the window and back surface field layers for the GaInP top cell 6 .…”

Section: Introductionmentioning

confidence: 99%

“…In addition, Al‐containing materials were successfully integrated in III–V solar cell devices as passivating AlGaAs 5 and AlGaInP 4,6 window layers. This led to a conversion efficiency as high as 28.3% for a GaInP/GaAs dual‐junction cell that utilized AlGaInP as both the window and back surface field layers for the GaInP top cell 6 . AlInP, however, has less parasitic optical absorption of short‐wavelength photons than AlGaInP and would improve short‐wavelength current collection beyond the ~550 nm absorption cutoff observed by Shoji et al 4 This is due to the large band gap of AlInP (~475–500 nm), 7,8 which is wider than all other III–V alloys at the GaAs lattice constant.…”

Section: Introductionmentioning

confidence: 99%

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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Boyer

Schulte

Young

et al. 2022

Progress in Photovoltaics

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We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of $40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter.Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

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Section: Resultssupporting

confidence: 57%

Section: Alinp Materials Characterizationmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Boyer

Schulte

Young

et al. 2022

Progress in Photovoltaics

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“…InGaP/GaAs dual-junction solar cells grown using D-HVPE have reached an efficiency of 24.9% [11][12]. Later, tandem cells made of InGaP/GaAs and fabricated using the triple-chamber HVPE system have attained a record efficiency of 28.3% [13]. Recently, the InGaP/GaAs/Ge triple-junction was reported with an efficiency of 29.78% [14], while GaAs/GaSb tandem cell has shown conversion efficiency up to 32.6% at 100sun under AM1.5D [15].…”

Section: Introductionmentioning

confidence: 99%

Simulation and performance optimization of GaAs/GaSb tandem solar cell

Kharchich

Khamlichi

2022

MATEC Web Conf.

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Multi-junction solar cells provide the highest efficiencies. Intense research activity is being held with the aim to increase the actual performance reached by these cells. Harvesting most of the solar spectrum and finding the optimum design variables in terms of structural parameters and carrier concentrations are the main topics being investigated by solar developers. The GaAs/GaSb based dualjunction solar cell was found suitable for the best absorption of solar spectrum. In this work, an optimization approach was applied to fix the optimal parameters of the top base layer of this structure that provide the maximum efficiency. To achieve this, a series of numerical simulations were carried out by means of Silvaco ATLAS software under standard AM1.5G spectrum where thicknesses and doping levels of the top base layer were varied. The obtained optimal structure yields a power conversion efficiency of 41.65% with open circuit voltage of 1.78 V, short circuit current of 35.72 mA / cm2 and fill factor of 90.16%. The performance of the GaAs/GaSb dual-junction solar cell was further improved by using sunlight concentration. A conversion power efficiency of 45.78% at 60sun light concentration was attained. It was found also that above this level of concentration ratio the detriment effect of shunt resistance dominates.

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1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

Yoshida

Oshima

Makita

et al. 2023

Adv Energy and Sustain Res

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Multijunction solar cells combining III–V and Si materials can provide high photoelectric conversion efficiency. Two‐terminal III–V//Si triple‐junction solar cells with an efficiency of 35.9% have already been developed using metal–organic vapor‐phase epitaxy and the direct wafer bonding technique. This study, however, proposes the low‐cost fabrication of III–V solar cells using hydride vapor‐phase epitaxy (HVPE). GaInAsP solar cells are fabricated using HVPE to apply to middle cells in III–V//Si triple‐junction structures. By controlling the partial pressure of the precursors, the optimal bandgap energy of 1.5 eV is obtained for the HVPE‐grown GaInAsP quaternary alloys. The 1.5 eV GaInAsP single‐junction solar cells show higher open‐circuit voltage than the HVPE‐grown GaAs solar cells. The open‐circuit voltage of the GaInAsP solar cells fabricated with a GaInAsP growth rate of 77.6 μm h−1 reaches 1.1 V upon the formation of the rear‐heterojunction structure. In addition, the external quantum efficiency spectra of the HVPE‐grown GaInP/GaInAsP dual‐junction solar cells show that the 1.5 eV GaInAsP solar cells are superior to the GaAs solar cells in terms of current matching for subcells in the III–V//Si triple‐junction structures.

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28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

Cited by 14 publications

References 32 publications

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Simulation and performance optimization of GaAs/GaSb tandem solar cell

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

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