28 FDSOI RF Figures of Merit down to 4.2 K

Nyssens, Lucas; Halder, Arka; Esfeh, Babak Kazemi; Planes, N.; Flandre, Denis; Kilchytska, Valeriya; Raskin, Jean‐Pierre

doi:10.1109/s3s46989.2019.9320656

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…Recently, in [22], RF characterization of 28-nm FD SOI NMOSFETs at cryogenic temperatures down to 4.2 K was conducted. An improvement of up to ∼130 GHz in ft and ∼75 GHz in fmax was observed for the shortest device (25 nm) at low temperature.…”

Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

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Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, Partially Depleted Silicon-on-Insulator (SOI) MOSFET is the mainstream technology for RF SOI systems. Fully Depleted (FD) SOI MOSFET is foreseen as one of the most promising candidates for the development of future lower power wireless communication systems operating in the millimeter-wave range. The high frequency performances of FD SOI transistors are presented at room but also at cryogenic and high temperature. Recently published results for FD SOI switches and low noise amplifiers are summarized. And finally, the potential interest and challenges to move from standard to high resistivity FD SOI substrates are discussed.

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Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

“…The RF performance of 28 nm FD SOI transistors at cryogenic temperature under low bias conditions was also investigated in [22]. Fig.…”

Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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“…In this paper, the main interesting features of the FD SOI CMOS technology for RF and millimeter-wave applications are presented. Firstly, the low-power and high-frequency performance of FD SOI [10]- [12] featuring various types of back gate contacts are shown for operation at cryogenic [13] and high temperature [14]. The benefit of the back gate biasing to improve the RF noise characteristics [15] as well as the transistor linearity [16] is demonstrated.…”

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confidence: 99%