28 Gb/s 850 nm oxide VCSEL development at Avago

Wang, Jingyi; Keever, M.; Feng, Zheng-Wen; Fanning, Thomas; Chen, Chu; Sridhara, Aaditya; Hopfer, F.; Sale, T.E.; Cheng, An-Nien; Lei, Lei; Ding, Li; Wen, Pin; Chang, Hsu-Hao; Wang, Charlie C. L.; Hui, David; Giovane, Laura M.

doi:10.1117/12.2004521

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…Table 2 shows that most GaN-VCSELs use a cavity length (distance between the DBRs) of about 7λ or even longer. GaAs-VCSELs, on the other hand, use a shorter cavity length, even as short as 0.5λ, to improve transport and optical confinement in order to push the high-speed performance [137][138][139] . There are several reasons for using longer cavity lengths in GaN-VCSELs.…”

Section: Cavity Lengthmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Section: Cavity Lengthmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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A 50 Gb/s NRZ Modulated 850 nm VCSEL Transmitter Operating Error Free to 90 °C

Kuchta

Rylyakov

Schow

et al. 2015

J. Lightwave Technol.

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We report on the properties of an 850nm VCSEL transmitter running at 50Gb/s with NRZ modulation from 30°C to 90°C. This is the highest transmitter operating temperature at 50Gb/s for a VCSEL link of any wavelength. This achievement is made possible by a combination of a high speed VCSEL design and driver and receiver circuits that incorporate equalization. Without equalization, the highest temperature attained with BER <1E-12 is 57°C.Index Terms-High-speed modulation, optical interconnects, semiconductor lasers, vertical cavity surface-emitting laser (VCSEL) 0733-8724 (c)

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