28 GHz band wireless power transfer experiments with a GaAs rectenna MMIC with an inductive high impedance patch antenna

Hirai, Tsukasa; Itoh, Takumi; Hirose, Yuya; Sakai, Naoki; Noguchi, Keisuke; Itoh, Kenji; Hasegawa, Naoki; Hirakawa, Takashi; Nakamoto, Yuta; Ohta, Yoshichika

doi:10.23919/apmc55665.2022.9999844

Cited by 8 publications

(2 citation statements)

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“…The first is that it is only valid for mm size rectennas, and the second is that it is designed for separation distances in the order of 10 mm. As such, this figure of merit would not be valid for the works from [ 17 , 22 ]. However, comparing rectennas becomes challenging due to differences in technologies, frequencies, and target applications.…”

Section: Resultsmentioning

confidence: 99%

“…A range of different rectifier design choices is used in these works, such as a cross-connected full-wave CMOS rectifier, a general voltage double using a diode-connected CMOS transistor, or a Dickson rectifier. Compound semiconductor technologies have also been attempted, where in [ 22 ], a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) was used as a diode in a voltage doubler circuit, and [ 13 ] used the voltage double circuit with an Asymmetrical Spacer Layer Tunnel (ASPAT) diode, which is also used in the work presented here.…”

Section: Introductionmentioning

confidence: 99%

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Miniature Integrated 2.4 GHz Rectennas Using Novel Tunnel Diodes

Walsh

Muttlak

Sadeghi

et al. 2023

Sensors

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This work presents the design, fabrication, and measured results of a fully integrated miniature rectenna using a novel tunnel diode known as the Asymmetrical Spacer Layer Tunnel (ASPAT). The term rectenna is an abbreviation for a rectifying antenna, a device with a rectifier and antenna coexisting as a single design. The ASPAT is the centrepiece of the rectifier used for its strong temperature independence, zero bias, and high dynamic range. The antenna is designed to be impedance matched with the rectifier, eliminating the need for a matching network and saving valuable real estate on the gallium arsenide (GaAs) substrate. The antenna is fully integrated with the rectifier on a single chip, thus enabling antenna miniaturisation due to the high dielectric constant of GaAs and spiral design. This miniaturisation enables the design to be fabricated economically on a GaAs substrate whilst being comparable in size to a 15-gauge needle, thus unlocking applications in medical implants. The design presented here has a total die size of 4 × 1.2 mm2, with a maximum measured output voltage of 0.97 V and a 20 dBm single-tone 2.35 GHz signal transmitted 5 cm away from the rectenna.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%